发明公开
- 专利标题： HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES
- 专利标题（中）： 与蚀刻面高可靠性光子器件
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申请号： EP06735363.1申请日： 2006-02-17
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公开(公告)号： EP1854189A2公开(公告)日： 2007-11-14
- 发明人: BEHFAR, Alex, A.
- 申请人： Binoptics Corporation
- 申请人地址： 9 Brown Road Ithaca, New York 14850 US
- 专利权人： Binoptics Corporation
- 当前专利权人： Binoptics Corporation
- 当前专利权人地址： 9 Brown Road Ithaca, New York 14850 US
- 代理机构： McCall, John Douglas
- 优先权： US653984P 20050218
- 国际公布： WO2006089128 20060824
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
公开/授权文献
- EP1854189B1 HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES 公开/授权日：2015-04-08
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