-
公开(公告)号：EP1413016B1
公开(公告)日：2008-09-17
申请号：EP02746451.0
申请日：2002-06-25
发明人： BEHFAR, Alex
CPC分类号： H01S5/1071 , Y10S438/94
摘要： A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.
-
公开(公告)号：EP1706894A2
公开(公告)日：2006-10-04
申请号：EP05705938.8
申请日：2005-01-19
IPC分类号： H01L21/00
CPC分类号： H01S5/0264 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02292 , H01S5/0262 , H01S5/0683 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , H01S5/4087
摘要： A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.
-
公开(公告)号：EP1683239A2
公开(公告)日：2006-07-26
申请号：EP04793940.0
申请日：2004-10-14
发明人： BEHFAR, Alex, A.
CPC分类号： H01S5/0264 , H01S5/02284 , H01S5/026 , H01S5/0262 , H01S5/0267 , H01S5/0654 , H01S5/0683 , H01S5/1014 , H01S5/1085 , H01S5/125 , H01S5/141 , H01S5/18 , H01S5/22 , H01S5/2231 , H01S5/4012 , H01S5/42
摘要： A surface-emitting laser (see Fig. 2, Character 10), in which light is emitted vertically at one end from a near 45° angled facet, includes a second end (see Fig. 2, Character 28) having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser (see Fig. 2, Character 10) comprises a divergence-compensating lens (see Fig. 21, Character 282) on the surface above the near 45°angled facet.
-
4.发明授权HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES 有权HOCHZUVERLÄSSIGEPHOTONISCHE VORRICHTUNGEN MITGEÄTZTENFACETTEN
公开(公告)号：EP1854189B1
公开(公告)日：2015-04-08
申请号：EP06735363.1
申请日：2006-02-17
发明人： BEHFAR, Alex, A.
CPC分类号： H01S5/323 , G02F1/17 , H01S5/0042 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/0282 , H01S5/16 , H01S5/22 , H01S5/2214
-
公开(公告)号：EP2789060A1
公开(公告)日：2014-10-15
申请号：EP12855851.7
申请日：2012-12-03
IPC分类号： H01S5/00
CPC分类号： H01S5/0014 , G01R31/26 , G01R31/2635 , H01S5/0042 , H01S5/0201 , H01S5/0203 , H01S5/028 , H01S5/0287 , H01S5/1014 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/34306 , H01S5/34313 , H01S5/34333
摘要： A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
-
公开(公告)号：EP1979999B1
公开(公告)日：2012-05-23
申请号：EP06849249.5
申请日：2006-12-26
IPC分类号： H01S5/026 , H01S5/18 , G02B6/42 , H01L31/153 , H01L31/18
CPC分类号： H01S5/0262 , G02B6/4214 , G02B6/4246 , H01L31/03046 , H01L31/105 , H01L31/107 , H01L31/153 , H01L31/1844 , H01S5/005 , H01S5/0078 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0264 , H01S5/0267 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , Y02E10/544
摘要： A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.
-
公开(公告)号：EP1706894B1
公开(公告)日：2012-05-23
申请号：EP05705938.8
申请日：2005-01-19
IPC分类号： H01S5/026
CPC分类号： H01S5/0264 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02292 , H01S5/0262 , H01S5/0683 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , H01S5/4087
摘要： A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.
-
公开(公告)号：EP1735884B1
公开(公告)日：2010-11-10
申请号：EP05744345.9
申请日：2005-04-14
CPC分类号： B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
摘要： A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.
-
9.发明公开HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE 审中-公开单向激光蚀刻高SMSR和光子器件具有低背反射
公开(公告)号：EP1609221A2
公开(公告)日：2005-12-28
申请号：EP04757753.1
申请日：2004-03-18
CPC分类号： H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/06817 , H01S5/0687 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/1085 , H01S5/125 , H01S5/14
摘要： Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
-
公开(公告)号：EP2847834A1
公开(公告)日：2015-03-18
申请号：EP13787334.5
申请日：2013-05-07
IPC分类号： H01S5/00
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0207 , H01S5/0217 , H01S5/02212 , H01S5/02236 , H01S5/02248 , H01S5/02284 , H01S5/0267 , H01S5/0287 , H01S5/1085 , H01S5/22 , H01S5/34326 , H01S2301/18
摘要： A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
-
-
-
-
-
-
-
-
-
搜索结果
29 条记录 (耗时 0.01 秒)
