发明公开
- 专利标题： LASER FACET PASSIVATION
- 专利标题（中）： 激光表面钝化
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申请号： EP06739683.8申请日： 2006-03-27
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公开(公告)号： EP1866955A2公开(公告)日： 2007-12-19
- 发明人: CHARACHE, Greg , HOSTETLER, John , JIANG, Ching-Long , MENNA, Raymond, J. , RADIONOVA, Radosveta , ROFF, Robert, W. , SCHLÜTER, Holger
- 申请人： Trumpf Photonics, Inc.
- 申请人地址： 2601 U.S. Rte. 130 S Cranbury, NJ 08512 US
- 专利权人： Trumpf Photonics, Inc.
- 当前专利权人： Trumpf Photonics, Inc.
- 当前专利权人地址： 2601 U.S. Rte. 130 S Cranbury, NJ 08512 US
- 代理机构： Kohler Schmid Möbus
- 优先权： US664931P 20050325
- 国际公布： WO2006104980 20061005
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer having a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.
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