公开(公告)号：EP1866955A2

公开(公告)日：2007-12-19

申请号：EP06739683.8

申请日：2006-03-27

申请人： Trumpf Photonics, Inc.

发明人： CHARACHE, Greg ,  HOSTETLER, John ,  JIANG, Ching-Long ,  MENNA, Raymond, J. ,  RADIONOVA, Radosveta ,  ROFF, Robert, W. ,  SCHLÜTER, Holger

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/4031

摘要： Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer having a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

摘要翻译： 准备二极管激光器的前面和后面的方法包括控制第一腔室内的气氛，使得氧气含量和水蒸汽含量被控制在预定水平内并且在第二腔室的受控气氛内将晶体管切割成二极管激光器 第一室以在二极管激光器的前面和后面上形成具有预定厚度的原生氧化物层。 在分裂之后，二极管激光器从受控气氛中的第一腔室被输送到第二腔室，二极管激光器的前后刻面上的自然氧化物层被部分去除，非晶表面层形成在前面和后面 二极管激光器的小面以及二极管激光器的前面和后面被钝化。