An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film (5), and a first metal electrode film (3) and a second metal electrode film (4) between which part of the piezoelectric thin film (5) is sandwiched; the first metal electrode film (3) has a plurality of holes (7) formed on an electrode plane opposite to the second metal electrode film (4) and having a depth equivalent to at least the thickness of the first metal electrode film (3); and if a combined thickness of top and bottom electrode layers (3,4) and the piezoelectric thin film (5) is ht, the covering ratio (σ) of the electrode plane of the first metal electrode film (3) satisfies a condition 0