发明公开
EP1891669A2 METHOD OF CURING HYDROGEN SILSES QUIOXANE AND DENSIFICATION IN NANO-SCALE TRENCHES
审中-公开
方法氢SILSES-QUIOXAN它的压缩剂在纳米尺寸电缆沟固化
- 专利标题： METHOD OF CURING HYDROGEN SILSES QUIOXANE AND DENSIFICATION IN NANO-SCALE TRENCHES
- 专利标题（中）： 方法氢SILSES-QUIOXAN它的压缩剂在纳米尺寸电缆沟固化
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申请号： EP06760541.0申请日： 2006-06-12
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公开(公告)号： EP1891669A2公开(公告)日： 2008-02-27
- 发明人: CHEN, Wei , HWANG, Byung, Keun , LEE, Jea-kyun , MOYER, Eric, Scott , SPAULDING, Michael, John , WANG, Sheng
- 申请人： Dow Corning Corporation
- 申请人地址： 2200 West Salzburg Road Midland MI 48686-0994 US
- 专利权人： Dow Corning Corporation
- 当前专利权人： Dow Corning Corporation
- 当前专利权人地址： 2200 West Salzburg Road Midland MI 48686-0994 US
- 代理机构： Gillard, Richard Edward
- 优先权： US690825P 20050615
- 国际公布： WO2006138055 20061228
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.
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