发明公开
EP1916222A2 MEMS device with reduced parasitic capacitance
审中-公开
MEMS-Vorrichtung mit reduzierterparasitärerKapazität
- 专利标题： MEMS device with reduced parasitic capacitance
- 专利标题（中）： MEMS-Vorrichtung mit reduzierterparasitärerKapazität
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申请号： EP07020581.0申请日： 2007-10-22
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公开(公告)号： EP1916222A2公开(公告)日： 2008-04-30
- 发明人: Watanabe, Toru , Sato, Akira , Inaba, Shogo , Mori, Takeshi
- 申请人： Seiko Epson Corporation
- 申请人地址： 4-1, Nishi-shinjuku 2-chome Shinjuku-ku Tokyo 163-0811 JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： 4-1, Nishi-shinjuku 2-chome Shinjuku-ku Tokyo 163-0811 JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2006289063 20061024; JP2007184020 20070713
- 主分类号： B81B3/00
- IPC分类号： B81B3/00
摘要：
A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
公开/授权文献
- EP1916222A3 MEMS device with reduced parasitic capacitance 公开/授权日：2013-02-27
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