摘要:
A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a first face of a substrate, and a movable electric resistor formed on the first face of the substrate and serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.
摘要:
The invention seeks to provide a high-frequency composite component capable of: simplifying the circuits from the antenna to the input side of the high-frequency amplifier circuit; suppressing a loss in the signal; and reducing the cost and the size, when a wireless system using plural frequency bands, such as a wireless LAN system using plural frequencies, is constructed. The high-frequency composite component is fabricated by placing an antenna 1 on a multi-layer wiring board 41, placing a multiplexer/demultiplexer circuit 2, matching circuits 3 and 4, and balanced-to-unbalanced transformer circuits 5 and 6 inside the board 41 respectively, and providing input and output terminals 7 through 10 on the side surface of the board 41. The antenna 1 is connected to the multiplexer/demultiplexer circuit 2 via an unbalanced line path 11, and the multiplexer/demultiplexer 2 is connected to the matching circuits 3 and 4 via unbalanced line paths 12 and 13, respectively. The matching circuits 3 and 4 are connected to the balanced-to-unbalanced transformer circuits 5 and 6, respectively, via unbalanced line paths 14 and 15, respectively. The respective balanced terminals of the balanced-to-unbalanced transformer circuits 5 and 6 are connected to the input and output terminals 7 and 8, and 9 and 10, respectively, via balanced line paths 16 and 17, respectively.
摘要:
A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
摘要:
A micro-electro mechanical system (MEMS) switch (10) includes a fixed electrode (15) formed on a first face of a substrate, and a movable electric resistor (20) formed on the first face of the substrate and serving as an electric resistor that divides an electric potential where the MEMS switch (10) is set to a conduction state.
摘要:
A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
摘要:
A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.
摘要:
A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.