发明公开
- 专利标题： METHOD FOR PRODUCING EPITAXIAL WAFER AND EPITAXIAL WAFER
- 专利标题（中）： 工艺用于生产和外延片外延片
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申请号： EP06822227申请日： 2006-10-25
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公开(公告)号： EP1953808A4公开(公告)日： 2010-12-01
- 发明人: KANAYA KOICHI , OHNISHI MASATO
- 申请人： SHINETSU HANDOTAI KK
- 专利权人： SHINETSU HANDOTAI KK
- 当前专利权人： SHINETSU HANDOTAI KK
- 优先权： JP2005337160 2005-11-22
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/24 ; H01L21/02
摘要：
The present invention provides a method for manufacturing an epitaxial wafer by supplying a raw material gas onto a silicon wafer to perform vapor-phase growth of an epitaxial layer, wherein a thickness of the epitaxial layer that is formed at a peripheral portion of the silicon wafer is controlled by controlling a growth rate and/or a growth temperature of the epitaxial layer that is subjected to vapor-phase growth. As a result, there is provided the method that enables manufacturing an epitaxial wafer having a small roll-off value by controlling a thickness of an epitaxial layer near the outermost periphery at the time of epitaxial growth.
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