发明公开
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
- 专利标题(中): 半导体器件及其制造方法
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申请号: EP06831438.4申请日: 2006-12-21
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公开(公告)号: EP1969622A1公开(公告)日: 2008-09-17
- 发明人: BASU, Arnab , ROBINSON, Max , CANTWELL, Ben , BRINKMAN, Andy
- 申请人: Durham Scientific Crystals Ltd
- 申请人地址: Netpark Incubator, Thomas Wright Way Sedgefield, County Durham TS21 3FD GB
- 专利权人: Durham Scientific Crystals Ltd
- 当前专利权人: Durham Scientific Crystals Ltd
- 当前专利权人地址: Netpark Incubator, Thomas Wright Way Sedgefield, County Durham TS21 3FD GB
- 代理机构: Bates, Alan Douglas Henry
- 优先权: GB0526070 20051221; GB0526073 20051221
- 国际公布: WO2007072023 20070628
- 主分类号: H01L21/36
- IPC分类号: H01L21/36
摘要:
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
公开/授权文献
- EP1969622B1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF 公开/授权日:2018-11-14
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