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公开(公告)号：EP2152943A1
公开(公告)日：2010-02-17
申请号：EP08750643.2
申请日：2008-05-16
发明人： BASU, Arnab , CANTWELL, Ben , ROBINSON, Max
CPC分类号： C30B23/06 , C23C16/42 , C23C16/46 , C30B25/10 , C30B29/48 , C30B35/002 , Y10T117/10
摘要： Apparatus for vapour phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first alid second limbs is located on the heated zone. The first limb contains a source material. The second limb supports a seed such that the source material and seed are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source and seed. The crystal is grown on the seed.
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公开(公告)号：EP1969622A1
公开(公告)日：2008-09-17
申请号：EP06831438.4
申请日：2006-12-21
发明人： BASU, Arnab , ROBINSON, Max , CANTWELL, Ben , BRINKMAN, Andy
IPC分类号： H01L21/36
CPC分类号： H01L21/02568 , C30B11/00 , C30B29/48 , H01L21/02378 , H01L21/02381 , H01L21/02395 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02562 , H01L21/02617 , Y10T428/21 , Y10T428/26 , Y10T428/266 , Y10T428/31678
摘要： A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
摘要翻译： 包括衬底，直接提供并形成在衬底上的中间层，过渡区以及提供并形成为过渡区的延伸部的II-VI族块状晶体材料的结构。 过渡区起着将结构从下面的衬底改变为块状晶体的结构的作用。 在制造方法中，可以使用类似的技术来生长过渡区和块状晶体层。
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公开(公告)号：EP2162924A2
公开(公告)日：2010-03-17
申请号：EP08762623.0
申请日：2008-06-30
发明人： BASU, Arnab , ROBINSON, Max
IPC分类号： H01L31/10 , H01L31/0336 , H01L31/0352
CPC分类号： H01L31/0336 , H01L31/03529 , H01L31/1828 , Y02E10/543
摘要： A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material.
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4.发明公开INSPECTION OF MATERIALS BY EVALUATING THE CONTRIBUTION OF BRAGG SCATTERING TO ENERGY DESPERSIVE X-RAY ATTENUATION 有权材料检查BY评价布拉格泄漏AT能量分散型X射线的贡献
公开(公告)号：EP2147297A2
公开(公告)日：2010-01-27
申请号：EP08750755.4
申请日：2008-05-19
发明人： ROBINSON, Max , GIBSON, Gary , RADLEY, Ian , BASU, Arnab
IPC分类号： G01N23/04 , G01N23/20 , G01V5/00 , G01N23/207
CPC分类号： G01N23/04 , G01N23/2076 , G01V5/0016
摘要： A method of and apparatus for obtaining radiation transmission data and especially an image of an object which involves providing a radiation source such as an x-ray or gamma-ray source and a radiation detector system such as an x-ray or gamma-ray detection system spaced therefrom to define a scanning zone therebetween, the detector system being capable of detecting and collecting spectroscopically resolvable information about incident radiation; collecting a dataset of information about radiationincident at the detector and hence transmissivity of an object in the scanning zone at at least one and preferably a plurality of scanning positions from radiation transmitted through the object and received at the detector system; resolving each such dataset spectroscopically across a plurality of frequency bands within the spectrum of the source; wherein at least one of the said plurality of frequency bands corresponds to a characteristically scattered wavelength of a target species to be identified, andwherein the absence of or substantial reduction in a transmitted signal intensity at the frequency band is interpreted as the presence of the said target species. The resolved data is preferably resolved as one or more images.
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公开(公告)号：EP1969645A1
公开(公告)日：2008-09-17
申请号：EP06831440.0
申请日：2006-12-21
发明人： BASU, Arnab , ROBINSON, Max , CANTWELL, Ben , BRINKMAN, Andy
IPC分类号： H01L31/18 , H01L31/103 , H01L31/115 , H01L31/117
CPC分类号： H01L31/115 , H01L31/1828 , Y02E10/543
摘要： Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
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公开(公告)号：EP1851368A1
公开(公告)日：2007-11-07
申请号：EP06709605.7
申请日：2006-02-02
发明人： BASU, Arnab , ROBINSON, Max 1 Bishop's Court Low Road , CANTWELL, Ben 152 Highfield Rise , BRINKMAN, Andy
CPC分类号： C30B23/005 , C30B23/002 , C30B23/02 , C30B23/025 , C30B29/48 , C30B29/66 , Y10T117/10 , Y10T117/1004
摘要： The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.
摘要翻译： 本发明涉及一种用于气相晶体生长以在一个生长循环中产生多个单晶的装置，该装置包括一个中央源室，多个生长室，多个适于将蒸汽从源室转移到生长室的通道装置 其中源室与生长室热分离。
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