发明公开
- 专利标题: On-chip reconfigurable memory
- 专利标题(中): Rekonfigurierbarer芯片旁观者
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申请号: EP08006005.6申请日: 1998-04-03
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公开(公告)号: EP1986233A2公开(公告)日: 2008-10-29
- 发明人: Leedy, Glenn, J.
- 申请人: Leedy, Glenn, J.
- 申请人地址: 8010 Bethel Church Road Saline, MI 48176 US
- 专利权人: Leedy, Glenn, J.
- 当前专利权人: Leedy, Glenn, J.
- 当前专利权人地址: 8010 Bethel Church Road Saline, MI 48176 US
- 代理机构: Diehl & Partner
- 优先权: US835190 19970404
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L21/768 ; H01L27/06 ; H01L27/108 ; H01L21/822 ; H01L27/105 ; H01L21/603 ; G11C29/00
摘要:
An on-chip reconfigurable memory is disclosed, comprising: a plurality of data lines, a plurality of gate lines, an array of memory cells, each memory cell storing a data value and comprising circuitry for coupling that data value to one of said data lines in response to the selection of one of said gate lines, a gate line selection circuit for enabling a gate line for a memory operation, said gate line selection circuit comprising programmable gates to receive address assignments for one or more of said gate lines, said address assignments for determining which of said gate lines is selected for each programmed address assignment and a controller for determining that at least one of said memory cells is defective and for altering, in at least one instance, said address assignments of said gate lines to eliminate references to that gate line that causes that defective memory cell to couple a data value to one of said data lines.
公开/授权文献
- EP1986233A3 On-chip reconfigurable memory 公开/授权日:2010-08-04
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