发明公开
- 专利标题: MAGNETORESISTIVE SENSOR AS TEMPERATURE SENSOR
- 专利标题(中): 磁阻传感器作为温度传感器
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申请号: EP07735241.7申请日: 2007-03-23
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公开(公告)号: EP2005139A2公开(公告)日: 2008-12-24
- 发明人: NIEUWENHUIS, Jeroen, H. , JANSEN, Theodorus, P., H., G. , VEEN, Jeroen , KAHLMAN, Josephus, A., H., M. , IMMINK, Albert, H., J.
- 申请人: Koninklijke Philips Electronics N.V.
- 申请人地址: Groenewoudseweg 1 5621 BA Eindhoven NL
- 专利权人: Koninklijke Philips Electronics N.V.
- 当前专利权人: Koninklijke Philips Electronics N.V.
- 当前专利权人地址: Groenewoudseweg 1 5621 BA Eindhoven NL
- 代理机构: Van Velzen, Maaike Mathilde
- 优先权: EP06111997 20060330
- 国际公布: WO2007113724 20071011
- 主分类号: G01N15/06
- IPC分类号: G01N15/06 ; G01R33/09 ; G01N33/543 ; G01R33/12 ; G01N35/00
摘要:
A detection system (100, 150) for qualitative or quantitative detection of a magnetic field property of a modulated magnetic field is described. The modulated magnetic field may e.g. stem from an adjacent electrical current (Iadj) or magnetic particles. The detection system (100, 150) comprises at least one magneto resistive sensor element (102), a current controller (104) for providing a sensing current (Isense) flowing through the magnetic sensor element (102) and a controlling means (108). The controlling means (108) is adapted for deriving at a first frequency f1 a temperature-related parameter of the at least one magneto resistive sensor. The controlling means (108) furthermore is adapted for deriving a qualitative or quantitative characteristic of the adjacent electrical current (Iadj) or magnetic particles, taking into account the derived temperature-related parameter. This second frequency (f1) is different from the first frequency (f1}). The invention also relates to a corresponding method.
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