发明授权
EP2086974B1 DIIMIDE-BASED SEMICONDUCTOR MATERIALS AND METHODS OF PREPARING AND USING THE SAME 有权
ON DIIMIDBASIS半导体材料和方法为他们的应用

  • 专利标题: DIIMIDE-BASED SEMICONDUCTOR MATERIALS AND METHODS OF PREPARING AND USING THE SAME
  • 专利标题(中): ON DIIMIDBASIS半导体材料和方法为他们的应用
  • 申请号: EP07862121.6
    申请日: 2007-11-19
  • 公开(公告)号: EP2086974B1
    公开(公告)日: 2013-07-24
  • 发明人: FACCHETTI, AntonioMARKS, Tobin J.YAN, He
  • 申请人: Polyera Corporation
  • 申请人地址: 8045 Lamon Avenue Suite 140 Skokie, IL 60077 US
  • 专利权人: Polyera Corporation
  • 当前专利权人: Polyera Corporation
  • 当前专利权人地址: 8045 Lamon Avenue Suite 140 Skokie, IL 60077 US
  • 代理机构: D'Arcy, Julia
  • 优先权: US859761P 20061117
  • 国际公布: WO2008063609 20080529
  • 主分类号: H01L51/00
  • IPC分类号: H01L51/00
DIIMIDE-BASED SEMICONDUCTOR MATERIALS AND METHODS OF PREPARING AND USING THE SAME
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