发明公开
EP2091890A2 PROCEDE D'OBTENTION D'UNE STRUCTURE POREUSE A BASE DE CARBURE DE SILICIUM
有权
生产多孔结构的方法,对硅基及制备的多孔Strucktur
- 专利标题: PROCEDE D'OBTENTION D'UNE STRUCTURE POREUSE A BASE DE CARBURE DE SILICIUM
- 专利标题(英): Method for obtaining a porous structure based on silicon carbide
- 专利标题(中): 生产多孔结构的方法,对硅基及制备的多孔Strucktur
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申请号: EP07871929.1申请日: 2007-12-13
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公开(公告)号: EP2091890A2公开(公告)日: 2009-08-26
- 发明人: ANDY, Patricia , TARDIVAT, Caroline , MEY, Damien , MAROUF, Ahmed
- 申请人: Saint-Gobain Centre de Recherches et d'Etudes Européen
- 申请人地址: "Les Miroirs" 18 Avenue d'Alsace 92400 Courbevoie FR
- 专利权人: Saint-Gobain Centre de Recherches et d'Etudes Européen
- 当前专利权人: Saint-Gobain Centre de Recherches et d'Etudes Européen
- 当前专利权人地址: "Les Miroirs" 18 Avenue d'Alsace 92400 Courbevoie FR
- 代理机构: Lucas, Francois
- 优先权: FR0655836 20061221
- 国际公布: WO2008078046 20080703
- 主分类号: C04B38/00
- IPC分类号: C04B38/00 ; C04B35/565 ; B01D53/94
摘要:
The invention relates to a method for obtaining a structure made from a porous ceramic material containing at least 95% silicon carbide SiC, said method being characterised in that the structure is obtained from a mixture of SiC grains comprising at least: a first fraction of α-SiC grains having a median diameter of less than 5 micrometers, a second fraction of α-SiC grains having a median diameter which is at least twice that of the first fraction of α-SiC grains and is greater than or equal to 5 micrometers, and a fraction of β-SiC grains or at least one precursor of β-SiC grains. The invention also relates to the resulting porous structure.
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