发明公开
- 专利标题： NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH
- 专利标题（中）： 纳米结构电及其制造方法
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申请号： EP07861100.1申请日： 2007-12-22
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公开(公告)号： EP2095426A2公开(公告)日： 2009-09-02
- 发明人: SVENSSON, Patrik , OHLSSON, Jonas , SAMUELSON, Lars , LÖWGREN, Truls , MARTYNOV, Yourii
- 申请人： QuNano AB
- 申请人地址： Ideon Science Park 223 70 Lund SE
- 专利权人： QuNano AB
- 当前专利权人： QuNano AB
- 当前专利权人地址： Ideon Science Park 223 70 Lund SE
- 代理机构： Franks, Barry Gerard
- 优先权： SE0602840 20061222; SE0700102 20070112; US812226 20070615; SE0702404 20071026
- 国际公布： WO2008079077 20080703
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; B82B1/00 ; H01L21/205
摘要：
The present invention provides a semiconductor device comprising a semiconductor nanoelement (100) and a volume element (105) arranged in epitaxial connection to each other. The semiconductor device is electrically connectable with the volume element (105) and the nanoelement (100) electrically connected in series. The volume element (105) is at least partly doped to provide a high charge carrier concentration into the nanoelement (100) and a low access resistance in an electrical connection to the volume element (105). Preferably the nanoelement (100) protrudes from a semiconductor substrate (110). A concentric layer (106) may be arranged on the volume element (105) to form an electrical contact. LED structures comprising nanoelement-volume element structures (100, 105) are disclosed. A method for producing a semiconductor device according to the invention is also presented.
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