发明公开
EP2107039A2 Microelectromechanical thin film device of transition metal oxide, and manufacturing method thereof
审中-公开
MikroelektromechanischeDünnfilmvorrichtungausÜbergangsmetalloxidund Herstellungsverfahren
- 专利标题： Microelectromechanical thin film device of transition metal oxide, and manufacturing method thereof
- 专利标题（中）： MikroelektromechanischeDünnfilmvorrichtungausÜbergangsmetalloxidund Herstellungsverfahren
-
申请号： EP09156790.9申请日： 2009-03-31
-
公开(公告)号： EP2107039A2公开(公告)日： 2009-10-07
- 发明人: Pellegrino, Luca , Biasotti, Michele , Siri, Antonio, Sergio
- 申请人： Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia
- 申请人地址： Corso F. Perrone, 24 16152 Genova IT
- 专利权人： Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia
- 当前专利权人： Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia
- 当前专利权人地址： Corso F. Perrone, 24 16152 Genova IT
- 代理机构： Deambrogi, Edgardo
- 优先权： ITTO20080257 20080402
- 主分类号： B81B3/00
- IPC分类号： B81B3/00 ; B81B7/00
摘要：
Microelectromechanical device (MEMS) integrated on a crystalline oxide substrate (1) comprising: at least one suspended structure (6) able to deform by the application of an electric or magnetic field and a thin film structure (10) comprising at least one transition metal oxide (10) deposited on the suspended structure (6). The device is characterized by the fact that the suspended structure (6) comprises a bearing layer (4) of crystalline oxides.
公开/授权文献
信息查询
