发明公开
EP2107039A3 Microelectromechanical thin film device of transition metal oxide, and manufacturing method thereof
审中-公开
过渡金属氧化物及其制备方法的微机电薄膜器件
- 专利标题： Microelectromechanical thin film device of transition metal oxide, and manufacturing method thereof
- 专利标题（中）： 过渡金属氧化物及其制备方法的微机电薄膜器件
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申请号： EP09156790.9申请日： 2009-03-31
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公开(公告)号： EP2107039A3公开(公告)日： 2013-08-28
- 发明人: Pellegrino, Luca , Biasotti, Michele , Siri, Antonio, Sergio
- 申请人： Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia
- 申请人地址： Corso F. Perrone, 24 16152 Genova IT
- 专利权人： Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia
- 当前专利权人： Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia
- 当前专利权人地址： Corso F. Perrone, 24 16152 Genova IT
- 代理机构： Deambrogi, Edgardo
- 优先权： ITTO20080257 20080402
- 主分类号： B81B3/00
- IPC分类号： B81B3/00 ; B81B7/00
摘要：
Microelectromechanical device (MEMS) integrated on a crystalline oxide substrate (1) comprising: at least one suspended structure (6) able to deform by the application of an electric or magnetic field and a thin film structure (10) comprising at least one transition metal oxide (10) deposited on the suspended structure (6). The device is characterized by the fact that the suspended structure (6) comprises a bearing layer (4) of crystalline oxides.
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