发明公开
EP2110857A1 BIPOLAR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING ZENER VOLTAGE
审中-公开
双极半导体元件，方法双极半导体元件的用于控制齐纳电压的生产和方法
- 专利标题： BIPOLAR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING ZENER VOLTAGE
- 专利标题（中）： 双极半导体元件，方法双极半导体元件的用于控制齐纳电压的生产和方法
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申请号： EP08704291.7申请日： 2008-01-31
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公开(公告)号： EP2110857A1公开(公告)日： 2009-10-21
- 发明人: ISHII, Ryosuke , NAKAYAMA, Koji , SUGAWARA, Yoshitaka , TSUCHIDA, Hidekazu
- 申请人： The Kansai Electric Power Co., Inc. , Central Research Institute of Electric Power Industry
- 申请人地址： 6-16 Nakanoshima 3-chome Kita-ku Osaka-shi Osaka 530-8270 JP
- 专利权人： The Kansai Electric Power Co., Inc.,Central Research Institute of Electric Power Industry
- 当前专利权人： The Kansai Electric Power Co., Inc.,Central Research Institute of Electric Power Industry
- 当前专利权人地址： 6-16 Nakanoshima 3-chome Kita-ku Osaka-shi Osaka 530-8270 JP
- 代理机构： Hall, Matthew Benjamin
- 优先权： JP2007021638 20070131; JP2007306297 20071127
- 国际公布： WO2008093789 20080807
- 主分类号： H01L29/866
- IPC分类号： H01L29/866 ; H01L21/329 ; H01L29/06 ; H01L29/861
摘要：
Bipolar semiconductor devices have a Zener voltage controlled highly precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.
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