发明授权
- 专利标题: WIDE-RANGE LOW-NOISE AMPLIFIER
- 专利标题(中): 低噪声宽范围放大
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申请号: EP08752875.8申请日: 2008-05-16
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公开(公告)号: EP2148433B1公开(公告)日: 2011-08-17
- 发明人: KAWASHIMA, Munenari , YAMAGUCHI, You , UEHARA, Kazuhiro , NISHIKAWA, Kenjiro
- 申请人: Nippon Telegraph and Telephone Corporation
- 申请人地址: 3-1, Otemachi 2-chome Chiyoda-ku Tokyo 100-8116 JP
- 专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人地址: 3-1, Otemachi 2-chome Chiyoda-ku Tokyo 100-8116 JP
- 代理机构: Ilgart, Jean-Christophe
- 优先权: JP2007131076 20070516
- 国际公布: WO2008143174 20081127
- 主分类号: H03F1/26
- IPC分类号: H03F1/26 ; H03F1/34 ; H03F3/189 ; H03F3/19
摘要:
In a wide-range low-noise amplifier: an input terminal is connected to a base terminal of a first transistor, one end of a first passive element, and one end of a third passive element; an emitter terminal of the first transistor is grounded; a collector terminal of the first transistor is connected an output terminal, a base terminal of the second transistor, one end of a capacitance element, and one end of a second passive element; the other end of the first passive element is connected to the other end of the capacitance element; an emitter terminal of the second transistor is connected to the other end of the third passive element; and a power terminal is connected to a collector terminal of the second transistor and the other end of the second passive element. The amplifier decides an impedance of the third passive element in accordance with an impedance of the first transistor whose emitter size has been decided so as to be appropriate for a desired saturation level of the amplifier, thereby adjusting the input impedance.
公开/授权文献
- EP2148433A1 WIDE-RANGE LOW-NOISE AMPLIFIER 公开/授权日:2010-01-27
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