发明公开
EP2186004A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
有权
VERFAHREN ZU SEINER STEUERUNG的HALBLEITERSPEICHERBAUEMENT
- 专利标题： SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
- 专利标题（中）： VERFAHREN ZU SEINER STEUERUNG的HALBLEITERSPEICHERBAUEMENT
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申请号： EP08791594.8申请日： 2008-07-17
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公开(公告)号： EP2186004A1公开(公告)日： 2010-05-19
- 发明人: KANNO, Shinichi , UCHIKAWA, Hironori
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： 1-1 Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： 1-1 Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2007225996 20070831
- 国际公布： WO2009028281 20090305
- 主分类号： G06F11/10
- IPC分类号： G06F11/10
摘要：
A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.
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