发明公开
EP2187439A1 INTERPOSER AND INTERPOSER MANUFACTURING METHOD 审中-公开
插入器和插入器制造方法

  • 专利标题: INTERPOSER AND INTERPOSER MANUFACTURING METHOD
  • 专利标题(中): 插入器和插入器制造方法
  • 申请号: EP08868937.7
    申请日: 2008-10-09
  • 公开(公告)号: EP2187439A1
    公开(公告)日: 2010-05-19
  • 发明人: SAKAMOTO, HajimeFURUTANI, ToshikiSEGAWA, Hiroshi
  • 申请人: Ibiden Co., Ltd.
  • 申请人地址: 1, Kandacho 2-chome Ogaki-shi Gifu 503-8604 JP
  • 专利权人: Ibiden Co., Ltd.
  • 当前专利权人: Ibiden Co., Ltd.
  • 当前专利权人地址: 1, Kandacho 2-chome Ogaki-shi Gifu 503-8604 JP
  • 代理机构: Uchida, Kenji
  • 优先权: US17430 20071228; US38949 20080324
  • 国际公布: WO2009084301 20090709
  • 主分类号: H01L23/32
  • IPC分类号: H01L23/32
INTERPOSER AND INTERPOSER MANUFACTURING METHOD
摘要:
The purpose of the present invention is to provide an interposer able to ease suitably the stress concentration at the conductor portion such a via conductor even when a semiconductor element generates heat, and an interposer in according with the present invention comprises at least one layer of an inorganic insulating layer, the first wiring formed in or on the surface of the above-described inorganic insulating layer, at least one layer of an organic insulating layer formed on the outmost layer inorganic insulating layer and on the above-described first wiring, the second wiring formed on the surface of the above-described organic insulating layer, and
a conductor portion for connecting the above-described first wiring and the above-described second wiring.
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