发明公开
- 专利标题： LOW PRESSURE METHOD ANNEALING DIAMONDS
- 专利标题（中）： 低压法回火的钻石
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申请号： EP08835217.4申请日： 2008-10-02
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公开(公告)号： EP2215291A1公开(公告)日： 2010-08-11
- 发明人: HEMLEY, Russell, J. , MAO, Ho-Kwang , YAN, Chih-Shiue , MENG, Yu-Fei
- 申请人： Carnegie Institution Of Washington
- 申请人地址： 1530 P Street NW Washington DC 20005 US
- 专利权人： Carnegie Institution Of Washington
- 当前专利权人： Carnegie Institution Of Washington
- 当前专利权人地址： 1530 P Street NW Washington DC 20005 US
- 代理机构： Lipscombe, Martin John
- 优先权： US960520P 20071002
- 国际公布： WO2009045445 20090409
- 主分类号： C30B25/02
- IPC分类号： C30B25/02
摘要：
The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400 °C to about 2200 °C at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.
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