发明公开
EP2221162A4 ETCHING MASK, BASE MATERIAL HAVING ETCHING MASK, FINELY PROCESSED ARTICLE, AND METHOD FOR PRODUCTION OF FINELY PROCESSED ARTICLE
审中-公开
蚀刻掩模,WITH蚀刻掩模,FINE加工制品并产生精细加工制品方法基本物质
- 专利标题: ETCHING MASK, BASE MATERIAL HAVING ETCHING MASK, FINELY PROCESSED ARTICLE, AND METHOD FOR PRODUCTION OF FINELY PROCESSED ARTICLE
- 专利标题(中): 蚀刻掩模,WITH蚀刻掩模,FINE加工制品并产生精细加工制品方法基本物质
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申请号: EP08848634申请日: 2008-11-13
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公开(公告)号: EP2221162A4公开(公告)日: 2011-12-28
- 发明人: TAKAYA YOSHIAKI , SATSUKA TAKURO , HAYASHIDA YOSHIHISA , KUSUURA TAKAHISA , MITRA ANUPAM
- 申请人: MARUZEN PETROCHEM CO LTD
- 专利权人: MARUZEN PETROCHEM CO LTD
- 当前专利权人: MARUZEN PETROCHEM CO LTD
- 优先权: JP2007295452 2007-11-14
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; B29C59/02 ; C08L45/00 ; C08L65/00 ; H01L21/027
摘要:
There are provided an etching mask which has a superior thermal imprinting characteristic and also a good anti-etching characteristic, a base material with the etching mask, a microfabricated product to which those etching mask and base material are applied, and a production method of the microfabricated product. The etching mask formed of a thermoplastic resin containing at least one kind of skeleton expressed by a chemical formula (1) or a chemical formula (2) in a main chain (R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 in the formulae (1), (2) can be different or same one another, each of which is a hydrogen atom, a deuterium atom, a hydrocarbon group having a carbon number of 1 to 15, a halogen atom, or a substituent group containing a hetero atom like oxygen or sulfur, and may form a ring structure one another. m and n are integers equal to or greater than 0).
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