发明公开
EP2223301A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH POWER SAVING FEATURE
审中-公开
具有节电功能不挥发半导体存储器结构
- 专利标题: NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH POWER SAVING FEATURE
- 专利标题(中): 具有节电功能不挥发半导体存储器结构
-
申请号: EP08800326.4申请日: 2008-09-15
-
公开(公告)号: EP2223301A1公开(公告)日: 2010-09-01
- 发明人: OH, HakJune
- 申请人: Mosaid Technologies Incorporated
- 申请人地址: 11 Hines Road, Suite 203 Ottawa, ON K2K 2X1 CA
- 专利权人: Mosaid Technologies Incorporated
- 当前专利权人: Mosaid Technologies Incorporated
- 当前专利权人地址: 11 Hines Road, Suite 203 Ottawa, ON K2K 2X1 CA
- 代理机构: Cohausz & Florack
- 优先权: US15724 20071221; US48737 20080429
- 国际公布: WO2009079744 20090702
- 主分类号: G11C11/413
- IPC分类号: G11C11/413 ; G11C11/4193 ; G11C7/20
摘要:
A non-volatile semiconductor memory device, which comprises (i) an interface having an input for receiving an input clock and a set of data lines for receiving commands issued by a controller including an erase command; (ii) a module having circuit components in a feedback loop configuration and being driven by a reference clock; (iii) a clock control circuit capable of controllably switching between a first state in which the reference clock tracks the input clock and a second state in which the reference clock is decoupled from the input clock; and (iv) a command processing unit configured to recognize the commands and to cause the clock control circuit to switch from the first state to the second state in response to recognizing the erase command. The module consumes less power when the reference clock is decoupled from the input clock than when the reference clock tracks the input clock.
信息查询
IPC分类: