摘要:
A phase change memory is disclosed. The phase change memory has a plurality of block units. The block units are alternately selected. The alternate block unit selection suppresses peak current ground bouncing on sub-wordline and connected ground line through sub-wordline driver transistor. An alternate bitline selection avoids adjacent cell heating interference in the selected block unit.
摘要:
Status indication in a system having a plurality of memory devices is disclosed. A memory device in the system includes a plurality of data pins for connection to a data bus. The memory device also includes a status pin for connection to a status line that is independent from the data bus. The memory device also includes first circuitry for generating, upon completion of a memory operation having a first duration, a strobe pulse of a second duration much shorter than the first duration. The strobe pulse provides an indication of the completion of the memory operation. The memory device also includes second circuitry for outputting the strobe pulse onto the status line via the status pin.
摘要:
A composite semiconductor memory device, comprising: a plurality of nonvolatile memory devices; and an interface device connected to the plurality of nonvolatile memory devices and for connection to a memory controller, the interface device comprising an error correction coding (ECC) engine. Also, a memory system, comprising: a memory controller; and at least one composite semiconductor memory device configured for being written to and read from by the memory controller and comprising a built-in error correction coding (ECC) engine. Also, a memory system, comprising: a composite semiconductor memory device comprising a plurality of nonvolatile memory devices; and a memory controller connected to the at least one composite semiconductor memory device, for issuing read and write commands to the composite semiconductor memory device to cause data to be written to or read from individual ones of the nonvolatile memory devices; the composite semiconductor memory device providing error-free writing and reading of the data.
摘要:
A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
摘要:
An outlet (70, 75, 76, 78, 79) for a Local Area Network (LAN), containing an integrated adapter (21, 25) that coverts digital data to and from analog video signal. Such an outlet allows using analog video units in a digital data network (80), eliminating the need for a digital video units or external adapter. The outlet may include a hub (31, 41) that allows connecting both an analog video signal via an adapter, as well as retaining the data network connection, which may be accessed by a network jack (73). The invention may also be applied to a telephone line-based data networking system. In such an environment, the data networking circuitry as well as the analog video adapters are integrated into a telephone outlet, providing for regular telephone service, analog video connectivity, and data networking as well. In such a configuration, the outlet would have a standard telephone jack (71), an analog video jack (72) and at least one data networking jack (73). Outlets according to the invention can be used to retrofit existing LAN and in-building telephone wiring, as well as original equipment in new installation
摘要:
A method of programming a flash memory device which is dynamically configurable to store data in the single bit per cell (SBC) storage mode or the multiple bit per cell (MBC) mode, such that both SBC data and MBC data co-exist within the same memory array. The method including the step of determining a high reliability level or a low reliability level of the received data and programming data in the SBC mode if data is determined to be high reliability and in the MBC mode if data is determined to be low reliability.
摘要:
A wireless network having multiple levels of receivers and transmitters separated by altitude comprising: a first layer of stations including receivers and transmitters with associated antennas located relatively close to the earth's surface; and, a second layer of stations including receivers and transmitters with associated antennas located above the earth's surface configured to connect with said first layer and with other stations of the second layer.