发明公开
EP2223344A2 RÜCKKONTAKTSOLARZELLE MIT GROSSFLÄCHIGEN RÜCKSEITEN-EMITTERBEREICHEN UND HERSTELLUNGSVERFAHREN HIERFÜR 审中-公开
拥有大型回发射区及其制造方法背接触太阳能电池

  • 专利标题: RÜCKKONTAKTSOLARZELLE MIT GROSSFLÄCHIGEN RÜCKSEITEN-EMITTERBEREICHEN UND HERSTELLUNGSVERFAHREN HIERFÜR
  • 专利标题(英): Rear-contact solar cell having large rear side emitter regions and method for producing the same
  • 专利标题(中): 拥有大型回发射区及其制造方法背接触太阳能电池
  • 申请号: EP08858742.3
    申请日: 2008-11-28
  • 公开(公告)号: EP2223344A2
    公开(公告)日: 2010-09-01
  • 发明人: HARDER, Nils-Peter
  • 申请人: Institut für Solarenergieforschung GmbH
  • 申请人地址: Am Ohrberg 1 31860 Emmerthal DE
  • 专利权人: Institut für Solarenergieforschung GmbH
  • 当前专利权人: Institut für Solarenergieforschung GmbH
  • 当前专利权人地址: Am Ohrberg 1 31860 Emmerthal DE
  • 代理机构: Kühn, Ralph
  • 优先权: DE102007059487 20071211; DE102008030880 20080630
  • 国际公布: WO2009074469 20090618
  • 主分类号: H01L31/0224
  • IPC分类号: H01L31/0224 H01L31/068
RÜCKKONTAKTSOLARZELLE MIT GROSSFLÄCHIGEN RÜCKSEITEN-EMITTERBEREICHEN UND HERSTELLUNGSVERFAHREN HIERFÜR
摘要:
The invention relates to a rear-contact solar cell and to a method for producing the same. The rear-contact solar cell comprises a semiconductor substrate (1) on the rear side surface (3) of which emitter regions (5), contacted by emitter contacts (11), and base regions (7), contacted by base contacts (13), are defined. The emitter regions and the base regions overlap at least in overlap regions (19), the emitter regions (5) in the overlap regions (19) reaching deeper into the semiconductor substrate (1) than the base regions (7), when seen from the rear side surface of the solar cell. As a result, a large area percentage of the rear side of the semiconductor substrate can be covered with a charge-collecting emitter, said emitter being at least partially buried in the interior of the semiconductor substrate (1) so that there is no risk of the base contacts (13) provoking a short circuit towards the buried emitter regions (5).
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