摘要:
A tandem solar cell structure is described, having the following features: (a) a monolithic structure having at least two different absorbers (104, 108) made from different materials for photovoltaic energy conversion, (b) an absorber (108) consisting of crystalline silicon, (c) a charge-carrier-selective contact on that side of the silicon absorber (108) which is directed to the adjoining absorber (104), (d) a structure of the charge-carrier-selective contact made from a thin interface oxide 107 and an amorphous, semi-crystalline or polycrystalline layer which consists mainly of silicon, is either p-doped (106) or n-doped (201), and is applied to said contact. The charge-carrier-selective contact constructed from the layers 107 and 106 or 201 ensures excellent surface passivation of the crystalline silicon absorber 108 and the selective extraction of a charge carrier type from the latter over the entire surface. A vertical current flow is therefore achieved, with the result that lateral transverse conductivity is not required in each sub-cell. High doping of the layer 106 or 201 may form a tunnel contact with respect to the adjoining layer. The thickness and/or doping of the layer 106 or 201 can be used to adjust the generation currents in the individual sub-cells. The temperature stability of the layers 107, 106 or 201 makes it possible to use subsequent production steps at temperatures of > 400°C.
摘要:
A solar cell with a dielectric double layer and a method for the manufacture thereof are described. Sequential vapour-phase deposition is used to produce a first dielectric layer (3), which contains aluminium oxide or comprises aluminium oxide, and a second, hydrogenous dielectric layer (5), which allows very good passivation of the surface of solar cells to be achieved.
摘要:
The invention concerns a solar cell (1) and a method for making same, said solar cell (1) comprising on its rear surface (3) both the emission contact (43) and the base contact (45), those two contacts (43, 45) being electrically isolated from each other by flanks (5) whereof the metal coating has been removed. The emitting zones (4) of the rear surface (3) of the cell are connected by channels to the transmitter (9) of the front face (8) of the cell. The emitting zones (4) of the rear surface (3) of the cell and the channels (7) consist of a laser. The metal coating of the side walls is removed by selective etching, said metal coating being removed only in the zone of the flanks (5) where the etching barrier layer (11) is insufficient.
摘要:
The invention concerns a solar cell (1) and a method for making same, said solar cell (1) comprising on its rear surface (3) both the emission contact (43) and the base contact (45), those two contacts (43, 45) being electrically isolated from each other by flanks (5) whereof the metal coating has been removed. The emitting zones (4) of the rear surface (3) of the cell are connected by channels to the transmitter (9) of the front face (8) of the cell. The emitting zones (4) of the rear surface (3) of the cell and the channels (7) consist of a laser. The metal coating of the side walls is removed by selective etching, said metal coating being removed only in the zone of the flanks (5) where the etching barrier layer (11) is insufficient.
摘要:
A method for production of a solar cell (1), comprising a semiconductor substrate (2), is disclosed, the electrical contact of which is achieved on the back face of the semiconductor substrate. The back face of the semiconductor substrate comprises locally doped regions (3). The adjacent regions (4) have a different doping from said region (3). According to the invention, short-circuiting of the conducting material (5) of the solar cell may be avoided, whereby both regions (3,4), at least at the boundaries (6) thereof, are coated with a thin electrically-insulating layer (7). Both regions (3,4) are then coated over the whole surface thereof with an electrically-conducting material (5). The separation of the electrically-conducting layers (5) is achieved by application of an etching barrier layer (8) to the whole surface, which is then selectively removed without a mask, for example by laser ablation, locally above the insulating layer (7). By the subsequent attack of an etching solution the etching barrier layer (8) is locally removed from the conducting layer (5) in the region of the openings (9).
摘要:
Die Erfindung betrifft eine Mehrschichtmaterialabfolge (1) zur Energiegewinnung aus Sonnenlicht aufweisend wenigstens ein Trägersubstrat (2) mit reflektierenden Eigenschaften wenigstens im Infrarot-Wellenlängenbereich, wenigstens eine auf dem Trägersubstrat (2) aufgebrachte Spacerschicht (4) mit reflektierenden Eigenschaften wenigstens im Infrarot-Wellenlängenbereich und wenigstens einer auf der Spacerschicht (4) zumindest teilweise aufgebrachten weiteren Folgeschicht (6), welche wenigstens ein Material aufweist, dessen elektrische Leitfähigkeit durch Wärme- und /oder Strahlungsbeaufschlagung veränderbar ausgebildet ist, wobei die Folgeschicht (6) und/oder die Spacerschicht (4) wenigstens einen unterstöchiometrischen Materialanteil aufweisen.
摘要:
The present invention relates to a solar cell (1) comprising a substrate (2) of p-type silicon or n-type silicon, wherein the substrate (2) comprises - a front side (2a) the surface of which is at least partially covered with at least one passivation layer (3) and - a back side (2b), wherein - the back side (2b) of the substrate (2) is at least partially covered with a passivation layer (4) having a thickness sufficient to allow a transport of holes through it, and - the passivation layer (4) on the backside 2b) of the substrate (2) is at least partially covered with a conductive polymer layer (5). The present invention also relates to a process for the preparation of a solar cell, to a solar cell obtainable by this process and to a solar module.