发明公开
- 专利标题: MEMORY CONTROLLER SUPPORTING RATE COMPATIBLE PUNCTURED CODES
- 专利标题(中): 互溶DOTTED码支存储管理
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申请号: EP08852229.7申请日: 2008-10-28
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公开(公告)号: EP2229680A1公开(公告)日: 2010-09-22
- 发明人: RADKE, William, H.
- 申请人: Micron Technology, Inc.
- 申请人地址: 8000 South Federal Way P.O. Box 6 Boise, ID 83707 US
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: 8000 South Federal Way P.O. Box 6 Boise, ID 83707 US
- 代理机构: Tunstall, Christopher Stephen
- 优先权: US943943 20071121
- 国际公布: WO2009067321 20090528
- 主分类号: G11C16/08
- IPC分类号: G11C16/08 ; G11C16/10 ; G11C16/34
摘要:
Apparatus and methods store data in a non-volatile solid state memory device (100) according to a rate-compatible code, such as a rate-compatible convolutional code (RPCC). An example of such a memory device (100) is a flash memory device (100). Data can initially be block encoded (112) for error correction and detection. The block-coded data can be further convolutionally encoded (114). Convolutional-coded data can be punctured (116) and stored in the memory device (100). The puncturing decreases the amount of memory used to store the data. Depending on conditions, the amount of puncturing can vary from no puncturing to a relatively high amount of puncturing to vary the amount of additional error correction provided and memory used. The punctured data can be decoded (120, 122) when data is to be read from the memory device (100).
公开/授权文献
- EP2229680B1 MEMORY CONTROLLER SUPPORTING RATE COMPATIBLE PUNCTURED CODES 公开/授权日:2013-02-13
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