A nonvolatile memory device includes a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern. The nonvolatile memory cells may be pillar shaped non-volatile memory cells which can be patterned using triple or quadruple exposure lithography or by using a self -assembling layer. The cells are arranged in parallelogram-shaped subarrays. The bit lines cross the word lines at an angle of 60 degrees. The memory device can be a three-dimensional array.