发明公开
EP2243866A1 PROCESS FOR PRODUCING LAMINATE COMPRISING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL LAYER, LAMINATE PRODUCED BY THE PROCESS, PROCESS FOR PRODUCING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE USING THE LAMINATE, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
审中-公开
用于生产层压板的单晶从A到AL-BASED III族氮化物，直所制造的层压板，用于生产从A到AL-BASED III族氮化物的单晶衬底USING和层压ALUMINIUMNITRIDEINKRISTALLSUBSTRAT
- 专利标题： PROCESS FOR PRODUCING LAMINATE COMPRISING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL LAYER, LAMINATE PRODUCED BY THE PROCESS, PROCESS FOR PRODUCING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE USING THE LAMINATE, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
- 专利标题（中）： 用于生产层压板的单晶从A到AL-BASED III族氮化物，直所制造的层压板，用于生产从A到AL-BASED III族氮化物的单晶衬底USING和层压ALUMINIUMNITRIDEINKRISTALLSUBSTRAT
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申请号： EP08870572.8申请日： 2008-12-16
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公开(公告)号： EP2243866A1公开(公告)日： 2010-10-27
- 发明人: NAGASHIMA, Toru , HAKOMORI, Akira , TAKADA, Kazuya , ISHIZUKI, Masanari , KOUKITU, Akinori , KUMAGAI, Yoshinao
- 申请人： National University Corporation Tokyo University of Agriculture and Technology , Tokuyama Corporation
- 申请人地址： 3-8-1, Harumi-cho Fuchu-shi, Tokyo 183-0057 JP
- 专利权人： National University Corporation Tokyo University of Agriculture and Technology,Tokuyama Corporation
- 当前专利权人： National University Corporation Tokyo University of Agriculture and Technology,Tokuyama Corporation
- 当前专利权人地址： 3-8-1, Harumi-cho Fuchu-shi, Tokyo 183-0057 JP
- 代理机构： Hatt, Anna Louise
- 优先权： JP2008006701 20080116
- 国际公布： WO2009090821 20090723
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; C30B25/18
摘要：
The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 µm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.
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