公开(公告)号：EP2243868A1

公开(公告)日：2010-10-27

申请号：EP09702588.6

申请日：2009-01-09

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  ISHIZUKI, Masanari ,  NAGASHIMA, Toru ,  HAKOMORI, Akira ,  TAKADA, Kazuya

IPC分类号： C30B29/38 ,  C30B25/18

CPC分类号： C30B25/18 ,  C30B25/183 ,  C30B29/403

摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800 °C in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600 °C, for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600 °C in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.

摘要翻译： 本发明提供一种自支撑基板，其通过以下步骤获得：在由无机的单晶制成的基底上形成厚度在3〜200nm范围内的Al系III族氮化物薄层 在800℃，在惰性气体气氛中基本上不分解的物质，当与800-1600℃的温度范围内的还原气体接触时会分解产生挥发物，例如蓝宝石; 通过在800-1600℃的温度范围内，在含有氨气体的还原性气体气氛中对叠层基板进行热处理，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙 ; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。 自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其晶面显示出大的曲率半径。

公开(公告)号：EP2243866A1

公开(公告)日：2010-10-27

申请号：EP08870572.8

申请日：2008-12-16

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

发明人： NAGASHIMA, Toru ,  HAKOMORI, Akira ,  TAKADA, Kazuya ,  ISHIZUKI, Masanari ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao

IPC分类号： C30B29/38 ,  C30B25/18

CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 µm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.

摘要翻译： 本发明是生产的层叠体，其包括以下步骤的方法：（1）制备具有形成在单晶的表面上的基底基板的所有这是从构成Al系III族氮化物单晶层的材料不同 要形成; （2），其具有的厚度为所制备的基底基板的单晶表面上10纳米至1.5微米的Al系III族氮化物单晶层的形成; （3）在形成Al系III族氮化物单晶层上形成非单晶层是不破坏先前获得的Al系基团比的Al系III族氮化物单晶层的100倍或更厚 -III族氮化物单晶层; 和（4）除去所述基底基板。 该方法提供了可以适合用作基底基板在Al系III族氮化物单晶自支撑衬底的制造中，该表面形成的Al系III族氮化物的单晶构成的基底， 而所有这一切是从开裂和翘曲免费。