发明公开
- 专利标题: Stacked memory devices
- 专利标题(中): Gestapelte Speichervorrichtungen
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申请号: EP10161832.0申请日: 2010-05-04
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公开(公告)号: EP2249348A2公开(公告)日: 2010-11-10
- 发明人: Ahn, Seung-eon , Kim, Ho-jung , Park, Chul-woo , Kang, Sang-beom , Choi, Hyun-ho
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: 416 Maetan-dong Yeongtong-gu Suwon-si, Gyeonggi-do 442-742 KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: 416 Maetan-dong Yeongtong-gu Suwon-si, Gyeonggi-do 442-742 KR
- 代理机构: Greene, Simon Kenneth
- 优先权: KR20090038949 20090504; KR20100004481 20100118
- 主分类号: G11C5/02
- IPC分类号: G11C5/02 ; G11C13/00 ; G11C16/02
摘要:
A stacked memory device may include a substrate, a plurality of memory groups sequentially stacked on the substrate, each memory group including at least one memory layer, a plurality of X-decoder layers, at least one of the plurality of X-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups, and a plurality of Y-decoder layers disposed alternately with the plurality of X-decoder layers, at least one of the plurality of Y-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups.
公开/授权文献
- EP2249348A3 Stacked memory devices 公开/授权日:2011-01-19
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