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    Stacked Memory Devices with Hierarchical Decoder Structure
    1.
    发明公开
    Stacked Memory Devices with Hierarchical Decoder Structure 有权
    Gestapelte Speichervorrichtungen mit hierarchyischer Dekodierungs-Struktur

    公开(公告)号：EP2234112A1

    公开(公告)日：2010-09-29

    申请号：EP10151879.3

    申请日：2010-01-28

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ahn, Seung-eon ,  Kim, Ho-jung ,  Park, Chul-woo ,  Kang, Sang-beom ,  Choi, Hyun-ho

    IPC分类号： G11C5/02 ,  H01L25/065

    CPC分类号： G11C5/025 ,  G11C5/02 ,  G11C13/0023 ,  G11C2213/71 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/49 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-decoders electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-decoder electrically connected to the plurality of inter-decoders and disposed between the plurality of inter-decoders. A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-drivers electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-driver electrically connected to the plurality of inter-drivers, and disposed between the plurality of inter-drivers.

    摘要翻译： 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储层，多个解码器电连接到多个存储器层并且布置在多个存储器层之间的相应的一个 所述多个组，以及至少一个预解码器，其电连接到所述多个解码器并且设置在所述多个解码器之间。 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储器层，多个驱动器电连接到多个存储器层并且布置在多个存储器层中的相应的一个 所述多个组以及电连接到所述多个驱动器之间的至少一个预驱动器，并且设置在所述多个驱动器之间。

    Stacked memory devices
    4.
    发明公开
    Stacked memory devices 审中-公开
    Gestapelte Speichervorrichtungen

    公开(公告)号：EP2249348A2

    公开(公告)日：2010-11-10

    申请号：EP10161832.0

    申请日：2010-05-04

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ahn, Seung-eon ,  Kim, Ho-jung ,  Park, Chul-woo ,  Kang, Sang-beom ,  Choi, Hyun-ho

    IPC分类号： G11C5/02 ,  G11C13/00 ,  G11C16/02

    CPC分类号： G11C5/025 ,  G11C5/02 ,  G11C8/10 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0028 ,  G11C2213/71 ,  G11C2213/72

    摘要： A stacked memory device may include a substrate, a plurality of memory groups sequentially stacked on the substrate, each memory group including at least one memory layer, a plurality of X-decoder layers, at least one of the plurality of X-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups, and a plurality of Y-decoder layers disposed alternately with the plurality of X-decoder layers, at least one of the plurality of Y-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups.

    摘要翻译： 层叠存储器件可以包括衬底，顺序地堆叠在衬底上的多个存储器组，每个存储器组包括至少一个存储器层，多个X译码器层，所述多个X译码器层中的至少一个是 设置在所述多个存储器组中的每个相邻的两个存储器组之间，以及与所述多个X译码器层交替布置的多个Y译码器层，所述多个Y译码器层中的至少一个设置在每个相邻的两个存储器组之间 的多个存储器组。