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发明公开
EP2263257A1 MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT, AND METHODS OF FORMING THE SAME 有权
一种用于生产存储器单元具有可逆，选择性冷拔碳纳米管电阻切换元件

  • 专利标题： MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT, AND METHODS OF FORMING THE SAME
  • 专利标题（中）： 一种用于生产存储器单元具有可逆，选择性冷拔碳纳米管电阻切换元件
  • 申请号： EP09730256.6
    申请日： 2009-04-10
  • 公开(公告)号： EP2263257A1
    公开(公告)日： 2010-12-22
  • 发明人: SCHRICKER, April, D.
  • 申请人： Sandisk 3D LLC
  • 申请人地址： 601 McCarthy Boulevard Milpitas, CA 95035 US
  • 专利权人： Sandisk 3D LLC
  • 当前专利权人： Sandisk 3D LLC
  • 当前专利权人地址： 601 McCarthy Boulevard Milpitas, CA 95035 US
  • 代理机构： Hitchcock, Esmond Antony
  • 优先权： US44406P 20080411; US410771 20090325
  • 国际公布： WO2009126876 20091015
  • 主分类号： H01L27/10
  • IPC分类号： H01L27/10 ;  H01L27/102 ;  H01L27/28 ;  H01L51/00 ;  G11C13/02
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT, AND METHODS OF FORMING THE SAME
摘要：
In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible- resistance switching element coupled to the steering element by fabricating a carbon nano- tube ("CNT") seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided.
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