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1.发明公开MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME 有权约一BELOW头部整形选择性制造，可逆碳纳米管电阻开关元件和方法来形成存储单元
公开(公告)号：EP2263258A2
公开(公告)日：2010-12-22
申请号：EP09739405.0
申请日：2009-04-09
申请人： Sandisk 3D LLC
发明人： SCHRICKER, April, D.
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/025 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L51/0048 , H01L51/0575
摘要： In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube ("CNT") material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the CNT seeding layer comprises silicon-germanium ("Si/Ge"), (b) planarizing a surface of the deposited CNT seeding layer, and (c) selectively fabricating CNT material on the CNT seeding layer; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
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2.发明授权METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE MEMORIES 有权方法碳纳米管蛋鸡中的用途非易失性存储器蚀刻
公开(公告)号：EP2263252B1
公开(公告)日：2013-10-09
申请号：EP09730879.5
申请日：2009-04-10
申请人： SanDisk 3D LLC
IPC分类号： H01L21/311 , H01L21/3213 , H01L27/10 , H01L27/24 , H01L45/00 , B82Y10/00 , B82Y40/00
CPC分类号： H01L21/31138 , B82Y10/00 , B82Y40/00 , G11C13/025 , H01L21/32136 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1675
摘要： Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube ("CNT") film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.
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3.发明授权
公开(公告)号：EP2263256B1
公开(公告)日：2013-08-21
申请号：EP09729975.4
申请日：2009-04-10
申请人： Sandisk 3D LLC
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/0002 , G11C13/0009 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/1021 , H01L27/285 , H01L51/0048 , Y10S977/712 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/734 , Y10S977/788 , Y10S977/789 , Y10S977/79 , Y10S977/855 , Y10S977/943
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4.发明授权MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME 有权约一BELOW头部整形选择性制造，可逆碳纳米管电阻开关元件和方法来形成存储单元
公开(公告)号：EP2263258B1
公开(公告)日：2013-12-04
申请号：EP09739405.0
申请日：2009-04-09
申请人： Sandisk 3D LLC
发明人： SCHRICKER, April, D.
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/025 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L51/0048 , H01L51/0575
摘要： In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube ("CNT") material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the CNT seeding layer comprises silicon-germanium ("Si/Ge"), (b) planarizing a surface of the deposited CNT seeding layer, and (c) selectively fabricating CNT material on the CNT seeding layer; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
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5.发明授权MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME 有权具有可逆碳纳米管电阻切换元件及其制造方法MEMORY CELL
公开(公告)号：EP2263273B1
公开(公告)日：2012-05-16
申请号：EP09743209.0
申请日：2009-04-10
申请人： Sandisk 3D LLC
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/1606 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L45/1641 , H01L45/1683
摘要： Methods of forming planar carbon nanotube ("CNT") resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material (58b), patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material (112) over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided.
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6.发明授权METHOD OF FORMING A MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT 有权一种用于生产存储器单元具有可逆，选择性冷拔碳纳米管电阻切换元件
公开(公告)号：EP2263257B1
公开(公告)日：2012-08-08
申请号：EP09730256.6
申请日：2009-04-10
申请人： Sandisk 3D LLC
发明人： SCHRICKER, April, D.
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/0002 , G11C13/0009 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/285 , H01L51/0048
摘要： In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible- resistance switching element coupled to the steering element by fabricating a carbon nano- tube ("CNT") seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided.
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7.发明公开
公开(公告)号：EP2263256A1
公开(公告)日：2010-12-22
申请号：EP09729975.4
申请日：2009-04-10
申请人： Sandisk 3D LLC
IPC分类号： H01L27/10 , H01L27/102 , H01L51/00 , G11C13/02
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/0002 , G11C13/0009 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/1021 , H01L27/285 , H01L51/0048 , Y10S977/712 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/734 , Y10S977/788 , Y10S977/789 , Y10S977/79 , Y10S977/855 , Y10S977/943
摘要： In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described.
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8.发明公开CARBON NANO-FILM REVERSIBLE RESISTANCE-SWITCHABLE ELEMENTS AND METHODS OF FORMING THE SAME 审中-公开可逆碳纳米管电阻开关生产要素和方法
公开(公告)号：EP2277200A1
公开(公告)日：2011-01-26
申请号：EP09747677.4
申请日：2009-05-15
申请人： Sandisk 3D LLC
发明人： LI, Yubao , SCHRICKER, April, D.
CPC分类号： H01L45/04 , H01L27/2409 , H01L45/1233 , H01L45/124 , H01L45/149 , H01L45/1616 , H01L45/1683 , Y10S977/734
摘要： Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanoparticles, and a second conductor disposed above the carbon nano-film. Numerous additional aspects are provided.
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9.发明公开MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME 有权具有可逆碳纳米管电阻切换元件及其制造方法MEMORY CELL
公开(公告)号：EP2263273A2
公开(公告)日：2010-12-22
申请号：EP09743209.0
申请日：2009-04-10
申请人： Sandisk 3D LLC
IPC分类号： H01L51/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/1606 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L45/1641 , H01L45/1683
摘要： Methods of forming planar carbon nanotube ("CNT") resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material (58b), patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material (112) over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided.
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10.发明公开MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT, AND METHODS OF FORMING THE SAME 有权一种用于生产存储器单元具有可逆，选择性冷拔碳纳米管电阻切换元件
公开(公告)号：EP2263257A1
公开(公告)日：2010-12-22
申请号：EP09730256.6
申请日：2009-04-10
申请人： Sandisk 3D LLC
发明人： SCHRICKER, April, D.
IPC分类号： H01L27/10 , H01L27/102 , H01L27/28 , H01L51/00 , G11C13/02
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/0002 , G11C13/0009 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/285 , H01L51/0048
摘要： In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible- resistance switching element coupled to the steering element by fabricating a carbon nano- tube ("CNT") seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided.
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