发明公开
EP2263273A2 MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
有权
具有可逆碳纳米管电阻切换元件及其制造方法MEMORY CELL
- 专利标题： MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
- 专利标题（中）： 具有可逆碳纳米管电阻切换元件及其制造方法MEMORY CELL
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申请号： EP09743209.0申请日： 2009-04-10
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公开(公告)号： EP2263273A2公开(公告)日： 2010-12-22
- 发明人: SCHRICKER, April, D. , CLARK, Mark, H.
- 申请人： Sandisk 3D LLC
- 申请人地址： 601 McCarthy Boulevard Milpitas, CA 95035 US
- 专利权人： Sandisk 3D LLC
- 当前专利权人： Sandisk 3D LLC
- 当前专利权人地址： 601 McCarthy Boulevard Milpitas, CA 95035 US
- 代理机构： Hitchcock, Esmond Antony
- 优先权： US44328 20080411
- 国际公布： WO2009137222 20091112
- 主分类号： H01L51/00
- IPC分类号： H01L51/00
摘要：
Methods of forming planar carbon nanotube ("CNT") resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material (58b), patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material (112) over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided.
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