发明公开
EP2284913A2 Manufacturing method of light emitting diode
有权
Verfahren zur Herstellung einer lichtemittierenden Diode
- 专利标题: Manufacturing method of light emitting diode
- 专利标题(中): Verfahren zur Herstellung einer lichtemittierenden Diode
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申请号: EP10190796.2申请日: 2006-08-17
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公开(公告)号: EP2284913A2公开(公告)日: 2011-02-16
- 发明人: Lee, Sang Min , Choi, Hyuck Jung , Kim, Won Il
- 申请人: SEOUL SEMICONDUCTOR CO., LTD.
- 申请人地址: 148-29 Gasan-dong, Geumcheon-gu Seoul 153-801 KR
- 专利权人: SEOUL SEMICONDUCTOR CO., LTD.
- 当前专利权人: SEOUL SEMICONDUCTOR CO., LTD.
- 当前专利权人地址: 148-29 Gasan-dong, Geumcheon-gu Seoul 153-801 KR
- 代理机构: Stolmár Scheele & Partner
- 优先权: KR20050078784 20050826
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Disclosed is a manufacturing method of a light emitting diode. The manufacturing method comprises the steps of preparing a substrate and mounting light emitting chips on the substrate. An intermediate plate is positioned on the substrate. The intermediate plate has through-holes for receiving the light emitting chips and grooves for connecting the through-holes to one another on its upper surface. A transfer molding process is performed with a transparent molding material by using the grooves as runners to form first molding portions filling the through-holes. Thereafter, the intermediate plate is removed, and the substrate is separated into individual light emitting diodes. Accordingly, it is possible to provide a light emitting diode in which the first molding portion formed through a transfer molding process is positioned within a region encompassed by cut surfaces of the substrate. Since the first molding portion is positioned within the region encompassed by the cut surfaces of the substrate, second molding portions can be symmetrically formed on the side surfaces of the first molding portions in various manners.
公开/授权文献
- EP2284913B1 Manufacturing method of light emitting diode 公开/授权日:2016-11-30
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