发明公开
EP2302659A2 Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
审中-公开
利用带电粒子束光刻的曲线特征来压裂和形成图案的方法
- 专利标题: Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
- 专利标题(中): 利用带电粒子束光刻的曲线特征来压裂和形成图案的方法
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申请号: EP10173794.8申请日: 2010-08-24
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公开(公告)号: EP2302659A2公开(公告)日: 2011-03-30
- 发明人: Fujimura, Akira , Tucker, Michael
- 申请人: D2S, Inc.
- 申请人地址: 4040 Moorpark Avenue Suite 250 San Jose, CA 95117 US
- 专利权人: D2S, Inc.
- 当前专利权人: D2S, Inc.
- 当前专利权人地址: 4040 Moorpark Avenue Suite 250 San Jose, CA 95117 US
- 代理机构: Clarke, Alison Clare
- 优先权: US618722 20091114; US237290P 20090826; US603580 20091021
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; G03F1/14 ; G03F7/20
摘要:
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
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