Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer (91) having amorphous silicon as a main component; a step of film-forming, on the top layer (91), an intermediate contact layer (93) electrically and optically connected thereto; a step of separating the intermediate contact layer (93) by removing the intermediate contact layer (93) by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove (14) that reaches the top layer (91); and a step of film-forming, on the intermediate contact layer (93) and inside the intermediate-contact-layer separating groove (14), a bottom layer (92) electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer (93).