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发明公开
EP2352175A1 METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE 审中-公开
VERFAHREN ZUR HERSTELLUNG EINES FOTOELEKTRISCHEN WANDLERS

METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE
摘要：
Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device (100) includes a step of forming a silicon photoelectric conversion layer (3) on a substrate (1) by a plasma CVD method. In the fabrication method for the photoelectric conversion device (100), the step of forming the photoelectric conversion layer (3) includes a step of forming an i-layer (42) formed of crystalline silicon and a step of forming, on the i-layer (42), an n-layer (43) under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.
摘要（中）：

提供一种通过快速形成具有良好覆盖率的n层实现高生产率和高转换效率的光电转换装置的制造方法。 光电转换装置（100）的制造方法包括通过等离子体CVD法在基板（1）上形成硅光电转换层（3）的步骤。 在光电转换装置（100）的制造方法中，形成光电转换层（3）的步骤包括形成由结晶硅形成的i层（42）的步骤，以及在i- 层（42），n层（43），氢稀释比为0〜10的条件下进行。

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