公开(公告)号：EP3637080A1

公开(公告)日：2020-04-15

申请号：EP19153820.6

申请日：2019-01-25

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： DOBASHI, Shinsaku ,  SHOJI, Takashi ,  DOHI, Akira ,  OKA, Nobuki ,  TAKEUCHI, Yoshiaki ,  TSURUGA, Shigenori ,  NISHIMIYA, Tatsuyuki

IPC分类号： G01M3/22 ,  G01M3/38 ,  G21C17/00

摘要： A leakage detection system (1) detects leakage of sodium in an air cooler (210) in a decay heat removal system for removing decay heat generated in a reactor internal by using sodium as a coolant. The leakage detection system (1) includes a camera (2) that detects at least one of a sodium droplet and sodium aerosol in a flow path of air in the air cooler (210), a measurement device (3) that measures concentration of sodium in the air at a downstream side of the camera (2), and a determination unit (43) that determines detection of leakage of sodium based on a detection result of the camera (2) and a measurement result of the measurement device (3).

公开(公告)号：EP2058845A1

公开(公告)日：2009-05-13

申请号：EP07792889.3

申请日：2007-08-22

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： KAWANO, Shingo ,  OHTSUBO, Eiichiro ,  MIYAZONO, Naoyuki ,  KAWAMURA, Keisuke ,  TAKEUCHI, Yoshiaki

IPC分类号： H01L21/205 ,  C23C16/455 ,  C23C16/509

CPC分类号： C23C16/509 ,  C23C16/45563 ,  C23C16/4557 ,  C23C16/46 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/18 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A discharge electrode, a thin-film deposition apparatus, and a solar cell fabrication method, which suppress the generation of a film thickness distribution and a film quality distribution, are provided. The discharge electrode includes two lateral structures 20 that are substantially parallel to each other and extend in an X direction; and a plurality of longitudinal structures 21a that are provided between the two lateral structures, are substantially parallel to each other, and extend in a Y direction substantially orthogonal to the X direction. The longitudinal structures 21a each include an electrode main body 35 whose one end 35a is connected to one of the lateral structures 20 and whose the other end 35b is connected to the other lateral structure 20; a gas pipe 41 disposed in a gas-pipe accommodating space 36; and a porous body 40. An opening 38 opens to a substrate 8 and is covered with the porous body 40. A gas diffusion path 37 connects the gas-pipe accommodating space 36 and the opening 38. The electrode inner surface 39 faces the gas-pipe accommodating space 36 and opposes the pipe outer surface 42b. A nozzle hole group 42c is arranged in the second direction in the gas pipe 41, and faces a section 39a at a side opposite to the gas diffusion path 37 in the electrode inner surface 39.

摘要翻译： 的放电电极，薄膜沉积设备，和一个太阳能电池的制造方法，该方法抑制的膜厚度分布和膜质量分布的生成，提供了。 放电电极包括两个横向结构20那样基本上是相互平行的，并在一个方向X延伸; 和纵向结构体21a做的两根横结构之间设置的复数，基本上平行于海誓山盟，和在Y方向大致正交的X方向延伸。 纵向结构21A每一个都包括在电极主体35的一端35A被连接到横结构20的一个上，另一端部35b连接到另一个横结构20; 在气管收容空间36设置在气体配管41; 和多孔体40中的开口38配有基板8和覆盖有多孔体40的气体扩散通路37连接气管收容空间36和开口38的电极内侧面39朝向气体 气管收容空间36和对着管外侧面42b。 的喷嘴孔群42C被布置在气体配管41的第二方向，并且在相反侧在所述电极内侧面的气体扩散通路37一面对部39A。39

公开(公告)号：EP2541612A1

公开(公告)日：2013-01-02

申请号：EP10846613.7

申请日：2010-11-11

申请人： Mitsubishi Heavy Industries, Ltd. ,  National Institute of Advanced Industrial Science and Technology

发明人： MIZUNO, Koichi ,  TAKEUCHI, Yoshiaki ,  SAKAI, Satoshi ,  TSURUGA, Shigenori ,  MATSUI, Takuya ,  KONDO, Michio ,  JIA, Haijun

IPC分类号： H01L31/04

CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/076 ,  Y02E10/548

摘要： Provided is a highly-efficient triple-junction thin-film photoelectric conversion device in which the short-circuit current value obtained at each photoelectric conversion layer is equalized, and which has a high haze factor. A thin-film photoelectric conversion device (100) is provided with a transparent electrode layer (2) and three silicon photoelectric conversion layers (91, 92, 93), in said order, on a substrate (1). The transparent electrode layer (2) has at least one opening section (5), which exposes the surface of the substrate (1) and which was formed by means of the etching process, and a haze factor of 60% or more in relation to the light in the broad wavelength region of the transparent electrode layer (2).

摘要翻译： 提供了一种高效率的三联薄膜光电转换装置，其中在每个光电转换层获得的短路电流值相等，并且具有高雾度因子。 薄膜光电转换装置（100）在基板（1）上设置有透明电极层（2）和三个硅光电转换层（91,92,93）。 透明电极层（2）具有至少一个开口部分（5），其暴露基板（1）的表面，并且通过蚀刻工艺形成，并且相对于 透明电极层（2）的宽波长区域的光。

公开(公告)号：EP2453466A1

公开(公告)日：2012-05-16

申请号：EP10796932.1

申请日：2010-02-15

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： TAKEUCHI, Yoshiaki ,  NISHIMIYA, Tatsuyuki ,  MIYAHARA, Hiroomi ,  NAKAO, Sachiko

IPC分类号： H01L21/205 ,  C23C16/455 ,  C23C16/509 ,  H01L31/04 ,  H05H1/46

CPC分类号： C23C16/4401 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1868 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a vacuum processing apparatus that is capable of increasing the quality of a deposited film, increasing the area thereof, and increasing deposition speed. A discharge chamber (2) formed of a ridge waveguide having ridge electrodes that are disposed facing each other and that generate plasma therebetween; a gas supplying portion (10) that is disposed adjacent to the discharge chamber (2) and that supplies source gas, which is used to form the plasma, toward the ridge electrodes; a substrate (S) that is disposed at a position such that the gas supplying portion (10) is flanked by the substrate (S) and the discharge chamber (2) and that is subjected to the processing by the plasma; a low-pressure vessel (7) that accommodates thereinside at least the discharge chamber (2), the gas supplying portion (10), and the substrate (S); and an exhaust portion (9) that is communicated at a position in the low-pressure vessel (7) such that this position and the gas supplying portion (10) are disposed on either side of the discharge chamber (2), and that reduces the pressure inside the low-pressure vessel (7) are provided.

摘要翻译： 提供一种能够提高沉积膜质量，增加其面积并提高沉积速度的真空处理装置。 一种放电室（2），其由脊形波导管形成，所述脊形波导管具有彼此面对设置并在其间产生等离子体的脊形电极; 气体供给部（10），其与所述放电室（2）相邻配置，向所述脊形电极供给用于形成所述等离子体的原料气体; 基板（S），其配置在使所述气体供给部（10）位于所述基板（S）和所述放电室（2）的侧面的位置，并被等离子体处理; （2），气体供给部（10）以及基板（S）中的低压容器（7）。 和在低压容器（7）中的位置处连通的排气部（9），使得该位置和气体供应部（10）设置在排气室（2）的任一侧，并且减小 提供低压容器（7）内的压力。

公开(公告)号：EP2133924A1

公开(公告)日：2009-12-16

申请号：EP07792055.1

申请日：2007-08-06

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： NAKANO, Youji ,  TAKEUCHI, Yoshiaki ,  YAMAGUCHI, Kengo ,  YAMAUCHI, Yasuhiro

IPC分类号： H01L31/04

CPC分类号： H01L31/077 ,  H01L31/0236 ,  H01L31/056 ,  H01L31/076 ,  H01L31/182 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device and a process for producing the photovoltaic device that combine a high photovoltaic conversion efficiency with a high level of productivity. The photovoltaic device includes at least a transparent electrode-bearing substrate, prepared by providing a transparent electrode layer 2 on a transparent, electrically insulating substrate 1, and a photovoltaic layer 92 containing mainly crystalline silicon-based semiconductors and a back electrode layer 4 formed sequentially on the transparent electrode layer 2 of the transparent electrode-bearing substrate, wherein the surface of the transparent electrode layer 2 of the transparent electrode-bearing substrate has a shape that contains a mixture of coarse and fine roughness, and exhibits a spectral haze ratio of 20% or greater for wavelengths of from 550 nm to 800 nm, and the photovoltaic layer containing mainly crystalline silicon-based semiconductors has a film thickness of from 1.2 µm to 2 µm, and a Raman ratio of from 3.0 to 8.0.

摘要翻译： 本发明提供一种光电转换效率高，生产率高的光电转换装置以及光电转换装置的制造方法。 该光电器件包括至少一个透明电极承载衬底，该衬底是通过在透明的电绝缘衬底1上提供透明电极层2以及主要包含结晶硅基半导体和后电极层4的光电层92而制备的 在透明电极承载基板的透明电极层2上，其中透明电极承载基板的透明电极层2的表面具有包含粗糙和微细粗糙度的混合物的形状，并且表现出光谱雾度比为 波长550nm〜800nm为20％以上，主要含有结晶性硅系半导体的光电转换层的膜厚为1.2μm〜2μm，喇曼比为3.0〜8.0。

公开(公告)号：EP2602356A1

公开(公告)日：2013-06-12

申请号：EP11814348.6

申请日：2011-05-09

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： NAKAO, Sachiko ,  SASAKAWA, Eishiro ,  TAKEUCHI, Yoshiaki ,  MIYAZONO, Naoyuki ,  OHTSUBO, Eiichiro

IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/04 ,  H05H1/46

CPC分类号： C23C16/50 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  C23C16/511 ,  H01J37/32229 ,  H01L31/1804 ,  H01L31/1816 ,  H01L31/1824 ,  H01L31/1876 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02P70/521

摘要： A vacuum processing apparatus capable of suppressing thermal deformation of a ridge electrode and a substrate, and capable of performing stable plasma processing of even large substrates. The apparatus comprises: a discharge chamber (2) composed of a ridge waveguide having an exhaust-side ridge electrode (21a) and a substrate-side ridge electrode (21b) between which a plasma is formed; a pair of converters, which convert high-frequency power into TE mode, which represents the basic transmission mode of rectangular waveguides, for transmission to the discharge chamber (2), and form a plasma between the exhaust-side ridge electrode (21a) and the substrate-side ridge electrode (21b); a uniform heating temperature controller (40), which is disposed on the outer surface of the substrate-side ridge electrode (21b) and heats the electrode uniformly; and a heat-absorbing temperature control unit (50), which is disposed on the outer surface of the exhaust-side ridge electrode (21a) and controls thermal flux through the thickness direction of a substrate (S) undergoing plasma processing. The substrate (S) is disposed between the exhaust-side ridge electrode (21a) and the substrate-side ridge electrode (21b), and subjected to plasma processing.

摘要翻译： 能够抑制脊电极和基板的热变形，能够进行均匀的大基板的等离子体处理的真空处理装置。 该装置包括：排出室（2），其由具有排气侧脊电极（21a）的脊波导和基板侧脊电极（21b）构成，在其间形成等离子体; 一对转换器，其将表示矩形波导的基本传输模式的高频功率转换成TE模式，用于传输到放电室（2），并在排气侧脊电极（21a）和 基板侧脊电极21b。 均匀加热温度控制器（40），其设置在基板侧脊电极（21b）的外表面上，并均匀地加热电极; 以及吸收温度控制单元（50），其设置在排气侧脊电极（21a）的外表面上，并且控制经历等离子体处理的基板（S）的厚度方向的热通量。 衬底（S）设置在排气侧脊电极（21a）和衬底侧脊电极（21b）之间，进行等离子体处理。

公开(公告)号：EP2472594A1

公开(公告)日：2012-07-04

申请号：EP10811587.4

申请日：2010-06-10

申请人： National Institute of Advanced Industrial Science and Technology ,  Mitsubishi Heavy Industries, Ltd.

发明人： KONDO, Michio ,  KOIDA, Takashi ,  TAKEUCHI, Yoshiaki ,  SAKAI, Satoshi ,  YAMAUCHI, Yasuhiro

IPC分类号： H01L31/04

CPC分类号： H01L31/043 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： Disclosed are a multi-junction photoelectric converter and an integrated multi-junction photoelectric converter, having a two-terminal structure, of which layers are laminated under less constraint of the previously laminated layers. Also disclosed is a method for manufacturing such converters. A plurality of photoelectric conversion cells of which spectral sensitivities differ from each other are laminated. At least the photoelectric conversion cells (2, 4) located at a light receiving end and the other end have conductive thin film layers (5a and 5b, 5c and 5d), respectively, on the top layers to be connected thereof. Another photoelectric conversion cell (3) has conductive thin film layers (16a, 16b) at the top and bottom layers, respectively, to be connected thereof. The top and bottom layers are joined to the top and bottom layers of the other cells via anisotropic conductive adhesive layers (6a, 6b) containing conductive fine particles in a transparent insulating material. The conductive fine particles in the anisotropic conductive adhesive layers (6a, 6b) electrically connect the layers in a direction along which the layers are laminated, and the conductive thin film layers (5a, 5b, 5c, 5d) electrically connect the photoelectric conversion layers (2, 3, 4) serving as materials to be joined in lateral directions (in-plane direction).

摘要翻译： 公开了一种多结光电变换器和综合多结光电转换器，具有两端子结构，其中层下的以前层压层的较少约束层压。 游离缺失所以光盘制造搜索器的方法。 光电转换单元的多个的光谱灵敏度从海誓山盟区分层叠。 至少所述光电转换单元（2，4）位于光接收端，而另一端有导电薄膜层（5a和5b，5c和5d），分别在被其连接的顶层。 另一个光电转换元件（3）具有导电薄膜层（16A，16B）在所述顶层和底层，分别被连接它们。 顶部和底部层通过各向异性导电粘接剂层接合到其它细胞的顶层和底层（6A，6B）含有In的透明绝缘材料中的导电细颗粒。 在各向异性导电性微粒导电性粘接剂层（6A，6B），其电连接沿该层被层叠在一个方向上的层，并且导电薄膜层（5A，5B，5C，5D），其电连接所述光电转换层 （2，3，4）作为材料，在横向方向上（面内方向）上接合。

公开(公告)号：EP2352175A1

公开(公告)日：2011-08-03

申请号：EP09828917.6

申请日：2009-08-18

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： YAMAGUCHI, Kengo ,  SAKAI, Satoshi ,  TAKEUCHI, Yoshiaki

IPC分类号： H01L31/04

CPC分类号： H01L31/1804 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0745 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device (100) includes a step of forming a silicon photoelectric conversion layer (3) on a substrate (1) by a plasma CVD method. In the fabrication method for the photoelectric conversion device (100), the step of forming the photoelectric conversion layer (3) includes a step of forming an i-layer (42) formed of crystalline silicon and a step of forming, on the i-layer (42), an n-layer (43) under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.

摘要翻译： 提供一种通过快速形成具有良好覆盖率的n层实现高生产率和高转换效率的光电转换装置的制造方法。 光电转换装置（100）的制造方法包括通过等离子体CVD法在基板（1）上形成硅光电转换层（3）的步骤。 在光电转换装置（100）的制造方法中，形成光电转换层（3）的步骤包括形成由结晶硅形成的i层（42）的步骤，以及在i- 层（42），n层（43），氢稀释比为0〜10的条件下进行。

公开(公告)号：EP2315258A1

公开(公告)日：2011-04-27

申请号：EP08877746.1

申请日：2008-10-30

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： MASHIMA, Hiroshi ,  ASAKUSA, Koichi ,  TAKANO, Akemi ,  YAMASHITA, Nobuki ,  TAKEUCHI, Yoshiaki

IPC分类号： H01L31/04

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现所需的结晶比。 制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基材基材上。