发明公开
EP2390932A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
有权
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
-
申请号： EP10733354.4申请日： 2010-01-20
-
公开(公告)号： EP2390932A1公开(公告)日： 2011-11-30
- 发明人: KURAMOTO, Masafumi , OGAWA, Satoru , NIWA, Miki
- 申请人： Nichia Corporation
- 申请人地址： 491-100 Oka Kaminaka-cho Anan-shi Tokushima 774-8601 JP
- 专利权人： Nichia Corporation
- 当前专利权人： Nichia Corporation
- 当前专利权人地址： 491-100 Oka Kaminaka-cho Anan-shi Tokushima 774-8601 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser
- 优先权： JP2009013712 20090123
- 国际公布： WO2010084746 20100729
- 主分类号： H01L33/36
- IPC分类号： H01L33/36 ; H01L21/52
摘要：
An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900°C to the semiconductor device and the base.
公开/授权文献
- EP2390932B1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 公开/授权日：2015-09-09
信息查询
IPC分类:
