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公开(公告)号：EP3163601B1
公开(公告)日：2020-03-11
申请号：EP16002296.8
申请日：2010-01-20
申请人： NICHIA CORPORATION
发明人： KURAMOTO, Masafumi , OGAWA, Satoru , NIWA, Miki
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3.发明公开SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权法生产半导体器件通过加入银或银与银或银上一拳格栅或布线基板表面的半导体部件的表面上，至少有一个所述表面有银带
公开(公告)号：EP2390903A1
公开(公告)日：2011-11-30
申请号：EP10733350.2
申请日：2010-01-20
申请人： Nichia Corporation
发明人： KURAMOTO, Masafumi , OGAWA, Satoru , NIWA, Miki
CPC分类号： H01L33/44 , H01L23/08 , H01L23/293 , H01L23/49579 , H01L23/49582 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/83 , H01L33/62 , H01L2224/05568 , H01L2224/16 , H01L2224/16225 , H01L2224/2712 , H01L2224/2745 , H01L2224/275 , H01L2224/29023 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29187 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45144 , H01L2224/73265 , H01L2224/83048 , H01L2224/83055 , H01L2224/83075 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83439 , H01L2224/83487 , H01L2224/8383 , H01L2224/8384 , H01L2224/83894 , H01L2224/83895 , H01L2224/83896 , H01L2224/83907 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0541 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/1576 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/201 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/3025 , H01L2933/0066 , H01S5/0226 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/48 , H01L2224/05599
摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900°C to the semiconductor device and the base.
摘要翻译： 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 一种用于制造在其中的银或提供提供了一种半导体元件的一个表面上接合基座和银或氧化银的表面上的氧化银的半导体装置，方法包括：在基本搜索做银排列的半导体元件的步骤 或设置在半导体元件的表面上的氧化银与银或氧化银接触的方式设置的基体的表面上，所述半导体元件和通过施加压力或超声波振动将半导体元件或基极的基极临时粘结 和永久地结合所述半导体元件和通过施加具有温度150〜900℃的半导体装置和基底热基底。
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公开(公告)号：EP2390932B1
公开(公告)日：2015-09-09
申请号：EP10733354.4
申请日：2010-01-20
申请人： Nichia Corporation
发明人： KURAMOTO, Masafumi , OGAWA, Satoru , NIWA, Miki
CPC分类号： H01L33/641 , H01L21/187 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/62 , H01L2224/0345 , H01L2224/0401 , H01L2224/06102 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29386 , H01L2224/32225 , H01L2224/812 , H01L2224/81801 , H01L2224/81894 , H01L2224/81907 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/83907 , H01L2224/85205 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0541 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
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5.发明公开METHOD FOR PRODUCING CONDUCTIVE MATERIAL, CONDUCTIVE MATERIAL OBTAINED BY THE SAME METHOD, ELECTRONIC DEVICE CONTAINING THE CONDUCTIVE MATERIAL, AND LIGHT-EMITTING DEVICE 审中-公开用于生产的导电材料中获得的导电材料，导电材料及发光器件，电子器件这一过程中
公开(公告)号：EP2407980A1
公开(公告)日：2012-01-18
申请号：EP10802279.9
申请日：2010-07-21
申请人： Nichia Corporation
CPC分类号： H01B1/22 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48097 , H01L2224/48247 , H01L2224/48997 , H01L2224/73265 , H01L2224/83439 , H01L2224/8384 , H01L2224/85205 , H01L2224/85951 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01058 , H01L2924/01063 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/48455
摘要： The object of the present invention is to provide a method for producing a conductive material that has a low electric resistance and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistance can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 µm to 10 µm both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.
摘要翻译： 本发明的目的是提供一种用于制造导电材料确实提供的方法具有低的电阻，并且没有获得使用以廉价且稳定的导电材料组合物。 具有低电阻的导电性材料可以通过包括加热的导电材料组合物的步骤的方法得到确实包含一个完整的固化或半固化的热固性树脂和热塑性树脂中的至少一种，以及银颗粒。 这样的导电材料是导电材料也包括稠合的银粒子，和热固性树脂微粒thathave至0.1微米至10微米（包括端点）和分散在该稠合的银粒子的平均粒径。 另外，在谋求导电性材料为导电材料也包括稠合的银粒子，和稠合的银粒子之间熔接的热塑性树脂。
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公开(公告)号：EP3151268B1
公开(公告)日：2020-04-01
申请号：EP16002295.0
申请日：2010-01-20
申请人： NICHIA CORPORATION
发明人： KURAMOTO, Masafumi , OGAWA, Satoru , NIWA, Miki
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7.发明授权METHOD OF PRODUCING A SEMICONDUCTOR DEVICE BY BONDING SILVER OXIDE OR SILVER ON A SURFACE OF A SEMICONDUCTOR ELEMENT WITH SILVER OXIDE OR SILVER ON A SURFACE OF A LEAD FRAME OR OF A WIRING SUBSTRATE, AT LEAST ONE OF SAID SURFACES BEING PROVIDED WITH SILVER OXIDE 有权法生产半导体器件通过加入银或银与银或银上一拳格栅或布线基板表面的半导体部件的表面上，至少有一个所述表面有银带
公开(公告)号：EP2390903B1
公开(公告)日：2016-11-02
申请号：EP10733350.2
申请日：2010-01-20
申请人： Nichia Corporation
发明人： KURAMOTO, Masafumi , OGAWA, Satoru , NIWA, Miki
CPC分类号： H01L33/44 , H01L23/08 , H01L23/293 , H01L23/49579 , H01L23/49582 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/83 , H01L33/62 , H01L2224/05568 , H01L2224/16 , H01L2224/16225 , H01L2224/2712 , H01L2224/2745 , H01L2224/275 , H01L2224/29023 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29187 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45144 , H01L2224/73265 , H01L2224/83048 , H01L2224/83055 , H01L2224/83075 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83439 , H01L2224/83487 , H01L2224/8383 , H01L2224/8384 , H01L2224/83894 , H01L2224/83895 , H01L2224/83896 , H01L2224/83907 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0541 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/1576 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/201 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/3025 , H01L2933/0066 , H01S5/0226 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/48 , H01L2224/05599
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8.发明公开SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
公开(公告)号：EP2390932A1
公开(公告)日：2011-11-30
申请号：EP10733354.4
申请日：2010-01-20
申请人： Nichia Corporation
发明人： KURAMOTO, Masafumi , OGAWA, Satoru , NIWA, Miki
CPC分类号： H01L33/641 , H01L21/187 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/62 , H01L2224/0345 , H01L2224/0401 , H01L2224/06102 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29386 , H01L2224/32225 , H01L2224/812 , H01L2224/81801 , H01L2224/81894 , H01L2224/81907 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/83907 , H01L2224/85205 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0541 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900°C to the semiconductor device and the base.
摘要翻译： 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种半导体器件的制造方法，其中设置在基体表面上的银或氧化银和设置在半导体元件的表面上的银或氧化银被接合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，并且通过向半导体施加温度为200〜900℃的热而将半导体元件和基板接合 设备和基地。
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