发明公开
EP2399287A2 CROSS-POINT MEMORY STRUCTURES, AND METHODS OF FORMING MEMORY ARRAYS
有权
交叉点内存结构和方法来形成存储器阵列
- 专利标题： CROSS-POINT MEMORY STRUCTURES, AND METHODS OF FORMING MEMORY ARRAYS
- 专利标题（中）： 交叉点内存结构和方法来形成存储器阵列
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申请号： EP10744098.4申请日： 2010-01-19
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公开(公告)号： EP2399287A2公开(公告)日： 2011-12-28
- 发明人: SILLS, Scott , SANDHU, Gurtej, S.
- 申请人： Micron Technology, Inc.
- 申请人地址： 8000 South Federal Way MS 1-515 Boise, ID 83716 US
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： 8000 South Federal Way MS 1-515 Boise, ID 83716 US
- 代理机构： Somervell, Thomas Richard
- 优先权： US389142 20090219
- 国际公布： WO2010096225 20100826
- 主分类号： H01L21/8239
- IPC分类号： H01L21/8239 ; H01L27/10 ; H01L21/027
摘要：
Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over the memory element material and extending along a second horizontal direction that is orthogonal to the first horizontal direction. Some embodiments include methods of forming memory arrays. The methods may include forming a memory cell stack over a first electrode material, and then patterning the first electrode material and the memory cell stack into a first set of spaced lines extending along a first horizontal direction. Spaced lines of second electrode material may be formed over the first set of spaced lines, and may extend along a second horizontal direction that is orthogonal to the first horizontal direction.
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