发明公开
- 专利标题： Pattern forming method
- 专利标题（中）： 图案形成方法
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申请号： EP11186305.6申请日： 2007-12-21
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公开(公告)号： EP2413194A3公开(公告)日： 2012-02-08
- 发明人: Tsubaki, Hideaki , Kanna, Shinichi
- 申请人： Fujifilm Corporation
- 申请人地址： 26-30 Nishiazabu 2-chome Minato-ku Tokyo JP
- 专利权人： Fujifilm Corporation
- 当前专利权人： Fujifilm Corporation
- 当前专利权人地址： 26-30 Nishiazabu 2-chome Minato-ku Tokyo JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2006347560 20061225; JP2007103901 20070411; JP2007117158 20070426; JP2007325915 20071218
- 主分类号： G03F7/32
- IPC分类号： G03F7/32 ; G03F7/20
摘要：
The present invention relates to a pattern forming method, comprising:
(A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
(B) exposing the resist film; and
(D) developing the resist film with a negative developer,
wherein (D) developing the resist film with a negative developer is performing development with a developer containing a solvent represented by formula (1) or a developer containing a solvent represented by formula (2):
wherein R and R' each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxyl group, an alkoxycarbonyl group, a carboxyl group, a hydroxy group, a cyano group or a halogen atom, and R and R' may combine with each other to form a ring:
wherein R" and R"" each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxyl group, an alkoxycarbonyl group, a carboxyl group, a hydroxyl group, a cyano group or a halogen atom, and R" and R"" may combine with each other to form a ring; and
R'" represents an alkylene group or a cycloalkylene group.
(A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
(B) exposing the resist film; and
(D) developing the resist film with a negative developer,
wherein (D) developing the resist film with a negative developer is performing development with a developer containing a solvent represented by formula (1) or a developer containing a solvent represented by formula (2):
wherein R and R' each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxyl group, an alkoxycarbonyl group, a carboxyl group, a hydroxy group, a cyano group or a halogen atom, and R and R' may combine with each other to form a ring:
wherein R" and R"" each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxyl group, an alkoxycarbonyl group, a carboxyl group, a hydroxyl group, a cyano group or a halogen atom, and R" and R"" may combine with each other to form a ring; and
R'" represents an alkylene group or a cycloalkylene group.
公开/授权文献
- EP2413194B1 Pattern forming method 公开/授权日：2014-05-28
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