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    Method of forming patterns
    2.
    发明公开
    Method of forming patterns 有权
    一种用于形成结构的方法

    公开(公告)号：EP2003505A3

    公开(公告)日：2009-05-27

    申请号：EP08010600.8

    申请日：2008-06-11

    申请人： FUJIFILM Corporation

    发明人： Tsubaki, Hideaki

    IPC分类号： G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

    CPC分类号： G03F7/2041 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/325

    摘要： A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

    Method of forming patterns
    4.
    发明公开
    Method of forming patterns 有权
    Verfahren zur Strukturformung

    公开(公告)号：EP2003505A2

    公开(公告)日：2008-12-17

    申请号：EP08010600.8

    申请日：2008-06-11

    申请人： FUJIFILM Corporation

    发明人： Tsubaki, Hideaki

    IPC分类号： G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

    CPC分类号： G03F7/2041 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/325

    摘要： A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

    摘要翻译： 一种形成图案的方法包括（a）用负显影用抗蚀剂组合物涂覆基材以形成抗蚀剂膜，其中抗蚀剂组合物含有能够通过酸的作用而增加极性的树脂，并变得更易溶于阳性 显影剂，并且在用光化射线或辐射照射时溶解在负显影剂中，（b）在形成抗蚀剂膜之后和在曝光抗蚀剂膜之前，用保护膜组合物在抗蚀剂膜上形成保护膜，（c） 通过浸渍介质形成抗蚀剂膜，和（d）用负极显影剂进行显影。

    Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays
    6.
    发明公开
    Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays 审中-公开
    结构形成用电子束或EUV射线显影的有机溶剂或用于多重显影的方法

    公开(公告)号：EP2746853A2

    公开(公告)日：2014-06-25

    申请号：EP13199335.4

    申请日：2010-02-19

    申请人： Fujifilm Corporation

    发明人： Tsubaki, Hideaki ,  Shirakawa, Koji ,  Tsuchihashi, Toru

    IPC分类号： G03F7/32 ,  G03F7/038 ,  H01L21/027 ,  G03F7/039

    摘要： Provided is a pattern-forming method including, in the following order: (1) a process of forming a film with an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin which contains an acid-decomposable repeating unit and is capable of decreasing the solubility in an organic solvent by the action of an acid; (2) a process of exposing the film with an electron beam or an EUV ray; and (4) a process of developing the film with a developer containing an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises:
    (A) the resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility in an organic solvent by the action of an acid;
    (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and
    (C) a solvent; and
    resin (A) is (Ai) a resin having a lactone group and containing a repeating unit represented by the following formula (1), or (Aii) a resin containing a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or cyano group and a repeating unit represented by the following formula (1):

    wherein A represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or a cyano group; R represents a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an aralkyl group, an alkoxy group, an alkylcarbonyloxy group, an alkylsulfonyloxy group, an alkyloxycarbonyl group or an aryloxycarbonyl group, and when two or more R's are present, each R may be the same as or different from every other R or when two or more R's are present, they may form a ring in combination with each other; a represents an integer of 1 to 3; and b represents an integer of 0 to (3-a).

    摘要翻译： 本发明提供一种图案形成方法，其包括，按以下顺序：（1）在光化射线敏感或感放射线性树脂组合物与形成的膜，其包含在酸分解性的重复单元含有并能够树脂的过程 降低在有机溶剂中的溶解性上通过酸的作用; （2）在电子束或EUV射线与暴露所述膜的工艺; 和（4）用含溶剂有机显影剂使膜worin光化射线敏感或辐射敏感树脂组合物的方法包括：（A）树脂包含酸分解性的重复单元的，并且能够减小该的 在通过酸的作用而有机溶剂的溶解性; （B）产生在与光化射线或辐射照射酸的化合物; 和（C）溶剂; 和树脂（A）是（AI）具有内酯基和含有由下述式（1）或（AII）含有具有脂环式烃结构substituiertem被羟基基团或重复单元的树脂表示的重复单元的树脂 氰基和由下式表示的重复单元（1）：其中A darstellt氢原子，烷基上的基团，环烷基，卤原子，或氰基; řdarstellt卤原子，上烷基，环烷基，以芳基，在链烯基，在芳烷基上的烷氧基，在烷基羰氧基，在烷基磺酰基，烷氧基羰基在基或芳氧基羰基，并且当两个或 多个R的存在时，各R可以相同或不同的与每个其它R或当两个或多个R的存在时，它们可形成在与海誓山盟组合的环; 一个darstellt上述1〜3的整数; 和b darstellt为0的整数（3-A）。

    Pattern forming method
    7.
    发明公开
    Pattern forming method 审中-公开
    图案形成方法

    公开(公告)号：EP2637063A2

    公开(公告)日：2013-09-11

    申请号：EP13170835.6

    申请日：2007-12-21

    申请人： Fujifilm Corporation

    发明人： Tsubaki, Hideaki ,  Kanna, Shinichi

    IPC分类号： G03F7/32 ,  G03F7/20

    CPC分类号： G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

    摘要： A pattern forming method, comprising:
    (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
    (B) exposing the resist film;
    (C) developing the resist film with a positive developer which is an alkali developer; and
    (D) developing the resist film with a negative developer containing an organic solvent.

    摘要翻译： 1.一种图案形成方法，其特征在于，包括：（A）在基材上涂布正型抗蚀剂组合物，所述正型抗蚀剂组合物的正型显影液中的溶解度增加，并且在利用光化射线或放射线照射时负型显影液中的溶解度降低， （B）暴露抗蚀剂膜; （C）用作为碱显影剂的正显影剂显影抗蚀剂膜; （D）用含有有机溶剂的负型显影剂使抗蚀剂膜显影。

    Pattern forming method
    8.
    发明公开
    Pattern forming method 有权
    Strukturbildungsverfahren

    公开(公告)号：EP2637062A2

    公开(公告)日：2013-09-11

    申请号：EP13170833.1

    申请日：2007-12-21

    申请人： Fujifilm Corporation

    发明人： Tsubaki, Hideaki ,  Kanna, Shinichi

    IPC分类号： G03F7/32 ,  G03F7/20

    CPC分类号： G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

    摘要： A pattern forming method, comprising:
    (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
    (B) exposing the resist film; and
    (D) developing the resist film with a negative developer containing butyl acetate.

    摘要翻译： 一种图案形成方法，包括：（A）用正性显影剂中的溶解度增加的正型抗蚀剂组合物涂覆基材，并且在用光化学辐射或辐射照射时，在负极显影剂中的溶解度降低，以形成抗蚀剂膜; （B）曝光抗蚀膜; 和（D）用含有乙酸丁酯的负显影剂显影抗蚀剂膜。

    Method of forming patterns
    9.
    发明公开
    Method of forming patterns 有权
    Verfahren zur Strukturformung

    公开(公告)号：EP2579098A1

    公开(公告)日：2013-04-10

    申请号：EP12197458.8

    申请日：2008-06-11

    申请人： Fujifilm Corporation

    发明人： Tsubaki, Hideaki

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  G03F7/11

    CPC分类号： G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10S430/114 ,  Y10S430/146

    摘要： A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer which is an alkaline developer and less soluble in a negative developer comprising an organic solvent upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer comprising an organic solvent.

    摘要翻译： 一种形成图案的方法包括（a）用负显影用抗蚀剂组合物涂覆基材以形成相对于水的后退接触角为70度或更高的抗蚀剂膜，其中用于负显影的抗蚀剂组合物含有能够 通过酸的作用增加极性，并且变得更可溶于阳离子显影剂，该阳性显影剂是碱性显影剂，并且在用光化射线或辐射照射时溶解在包含有机溶剂的负显影剂中较少溶解，（b）使抗蚀剂膜 通过浸渍介质，和（c）用包含有机溶剂的负显影剂进行显影。