发明公开
- 专利标题： Pattern forming method
- 专利标题（中）： Strukturbildungsverfahren
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申请号： EP11186306.4申请日： 2007-12-21
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公开(公告)号： EP2413195A2公开(公告)日： 2012-02-01
- 发明人: Tsubaki, Hideaki , Kanna, Shinichi
- 申请人： Fujifilm Corporation
- 申请人地址： 26-30 Nishiazabu 2-chome Minato-ku Tokyo JP
- 专利权人： Fujifilm Corporation
- 当前专利权人： Fujifilm Corporation
- 当前专利权人地址： 26-30 Nishiazabu 2-chome Minato-ku Tokyo JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2006347560 20061225; JP2007103901 20070411; JP2007117158 20070426; JP2007325915 20071218
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
The present invention is directed to a pattern forming method, comprising: forming a resist film by applying, to a substrate, a resin composition containing a resin of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases under an action of an acid, wherein the resin composition is capable of forming a resist film of which solubility in the positive developer increases and solubility in the negative developer decreases upon irradiation with actinic rays or radiation;
exposing the resist film with EUV light; and
developing the resist film after the exposing with the negative developer containing an organic solvent.
exposing the resist film with EUV light; and
developing the resist film after the exposing with the negative developer containing an organic solvent.
公开/授权文献
- EP2413195B1 Pattern forming method 公开/授权日：2013-08-28
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