发明公开
- 专利标题： MOSFET AND METHOD FOR MANUFACTURING MOSFET
- 专利标题（中）： MOSFET及其制造MOSFET
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申请号： EP10756048申请日： 2010-03-23
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公开(公告)号： EP2413364A4公开(公告)日： 2013-05-08
- 发明人: WADA KEIJI , HARADA SHIN , MASUDA TAKEYOSHI , HONAGA MISAKO
- 申请人： SUMITOMO ELECTRIC INDUSTRIES
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES
- 优先权： JP2009079408 2009-03-27
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L29/04 ; H01L29/16
摘要：
A MOSFET 1 includes: a silicon carbide (SiC) substrate (2) having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer (21) formed on the main surface of the SiC substrate (2); and an insulating film (26) formed in contact with a surface of the semiconductor layer (21). The MOSFET 1 has a sub-threshold slope of not more than 0.4 V/Decade.
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