公开(公告)号：EP3035371A4

公开(公告)日：2017-03-22

申请号：EP14834133

申请日：2014-06-13

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： HORII TAKU ,  KUBOTA RYOSUKE ,  MASUDA TAKEYOSHI

IPC分类号： H01L21/02 ,  H01L21/04 ,  H01L21/205 ,  H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/12 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/1608 ,  H01L21/02002 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/047 ,  H01L21/0475 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/31111 ,  H01L29/0619 ,  H01L29/66068 ,  H01L29/7811

摘要： A silicon carbide semiconductor substrate (10) includes: a base substrate (1) that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and an epitaxial layer (2) formed on the main surface (1A). The silicon carbide semiconductor substrate (10) has an amount of warpage of not less than -100 µm and not more than 100 µm when a substrate temperature is a room temperature and has an amount of warpage of not less than -1.5 mm and not more than 1.5 mm when the substrate temperature is 400°C.

摘要翻译： 碳化硅半导体衬底（10）包括：基底（1），其具有外表面，其具有不小于100mm的外径，并且由单晶碳化硅制成; 和形成在主表面（1A）上的外延层（2）。 当衬底温度是室温时，碳化硅半导体衬底（10）具有不小于-100μm并且不大于100μm的翘曲量，并且具有不小于-1.5mm的翘曲量，而不是更大 当衬底温度为400℃时，超过1.5mm。

公开(公告)号：EP2937905A4

公开(公告)日：2016-12-21

申请号：EP13865084

申请日：2013-11-06

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： HIYOSHI TORU ,  MASUDA TAKEYOSHI ,  WADA KEIJI ,  TSUNO TAKASHI

IPC分类号： H01L29/12 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L29/1608 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/42364 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

公开(公告)号：EP2988323A4

公开(公告)日：2016-11-30

申请号：EP14784819

申请日：2014-03-05

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： SAITOH YU ,  MASUDA TAKEYOSHI ,  HIRATSUKA KENJI

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/4236 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/049 ,  H01L21/31111 ,  H01L21/31144 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7813

公开(公告)号：EP2770537A4

公开(公告)日：2015-08-26

申请号：EP12841109

申请日：2012-09-12

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： HIYOSHI TORU ,  MASUDA TAKEYOSHI ,  WADA KEIJI

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/12

CPC分类号： H01L29/045 ,  H01L21/3065 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7813

摘要： When viewed in a plan view, a termination region (TM) surrounds an element region (CL). A first side of a silicon carbide substrate (SB) is thermally etched to form a side wall (ST) and a bottom surface (BT) in the silicon carbide substrate (SB) at the termination region (TM). The side wall (ST) has a plane orientation of one of {0-33-8} and {0-11-4}. The bottom surface (BT) has a plane orientation of {000-1}. On the side wall (ST) and the bottom surface (BT), an insulating film (8T) is formed. A first electrode (12) is formed on the first side of the silicon carbide substrate (SB) at the element region (CL). A second electrode (14) is formed on a second side of the silicon carbide substrate (SB).

公开(公告)号：EP2804215A4

公开(公告)日：2015-07-01

申请号：EP12864703

申请日：2012-11-27

申请人： SUMITOMO ELECTRIC INDUSTRIES ,  NAT UNIV CORP NARA INST

发明人： HIYOSHI TORU ,  MASUDA TAKEYOSHI ,  HATAYAMA TOMOAKI

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/12 ,  H01L29/739

CPC分类号： H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L21/3247 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7397

摘要： A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With this thermal etching, a carbon film (50) is formed on the silicon carbide layer. Heat treatment is provided to the silicon carbide layer to diffuse carbon from the carbon film (50) into the silicon carbide layer.

公开(公告)号：EP2722892A4

公开(公告)日：2015-01-21

申请号：EP12800187

申请日：2012-05-29

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： HONAGA MISAKO ,  MASUDA TAKEYOSHI

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L21/336 ,  H01L29/12 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/4941 ,  H01L29/7813

摘要： A gate electrode (50) includes a polysilicon film (51) in contact with a gate insulating film (41), a barrier film (52) provided on the polysilicon film (51), a metal film (53) provided on the barrier film (52) and made of refractory metal. An interlayer insulating film (42) is arranged so as to cover the gate insulating film (41) and the gate electrode (50) provided on the gate insulating film (41). The interlayer insulating film (42) has a substrate contact hole (SH) partially exposing a silicon carbide substrate (30) in a region in contact with the gate insulating film (41). A interconnection (71) is electrically connected to the silicon carbide substrate (30) through the substrate contact hole (SH) and is electrically insulated from the gate electrode (50) by the interlayer insulating film (42).

公开(公告)号：EP2696368A4

公开(公告)日：2014-10-15

申请号：EP12768099

申请日：2012-01-27

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： MASUDA TAKEYOSHI ,  HIYOSHI TORU ,  WADA KEIJI

IPC分类号： H01L29/12 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/28 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

公开(公告)号：EP2546867A4

公开(公告)日：2014-07-09

申请号：EP11753286

申请日：2011-03-04

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： HIYOSHI TORU ,  MASUDA TAKEYOSHI ,  WADA KEIJI

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/12 ,  H01L29/78

CPC分类号： H01L21/8213 ,  H01L21/049 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/94

摘要： A method for manufacturing a silicon carbide semiconductor device, comprising the steps of: preparing a semiconductor film made of silicon carbide; forming an insulating film on a surface of said semiconductor film by a deposition method; and performing post heat treatment on said semiconductor film on which said insulating film is formed, a heat treatment temperature in said step of performing post heat treatment being higher than a process temperature in said step of forming an insulating film and lower than a melting point of said insulating film, and not lower than 1200°C and not higher than 1400°C.

公开(公告)号：EP2434534A4

公开(公告)日：2013-12-25

申请号：EP10777650

申请日：2010-04-22

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： WADA KEIJI ,  TAMASO HIDETO ,  MASUDA TAKEYOSHI ,  HONAGA MISAKO

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/337 ,  H01L21/768 ,  H01L29/12 ,  H01L29/417 ,  H01L29/78 ,  H01L29/808

CPC分类号： H01L21/0485 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/808

摘要： A semiconductor device employing silicon carbide, and the like are provided. In the semiconductor device, even when an electrode material and an upper electrode material are different, a problem does not take place at an interface at which these different types of metals are in contact with each other, thus obtaining high reliability in long-term use. The semiconductor device includes: a contact electrode 16 in contact with silicon carbides 14, 18; and an upper electrode 19 electrically conductive to the contact electrode. The contact electrode 16 is formed of an alloy including titanium, aluminum, and silicon, the upper electrode 19 is formed of aluminum or an aluminum alloy, and the upper electrode achieves the electric conduction to the contact electrode with the upper electrode making contact with the contact electrode.

摘要翻译： 提供采用碳化硅的半导体器件等。 在半导体器件中，即使当电极材料和上电极材料不同时，在这些不同类型的金属彼此接触的界面处也不会发生问题，因此在长期使用中获得高可靠性 。 该半导体器件包括：与碳化硅14,18接触的接触电极16; 以及与接触电极导电的上电极19。 接触电极16由包含钛，铝和硅的合金形成，上电极19由铝或铝合金形成，并且上电极实现与上电极接触的接触电极的导电 接触电极。

公开(公告)号：EP2413365A4

公开(公告)日：2013-05-08

申请号：EP10756049

申请日：2010-03-23

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： WADA KEIJI ,  HARADA SHIN ,  MASUDA TAKEYOSHI ,  HONAGA MISAKO

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/04 ,  H01L29/16

CPC分类号： H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78